EV1320QI-E Enpirion, EV1320QI-E Datasheet

EV1320QI-E

Manufacturer Part Number

EV1320QI-E

Description

Evaluation Board for EV1320QI

Manufacturer

Enpirion

Datasheets

1.EV1320QI-E.pdf (20 pages)

2.EV1320QI-E.pdf (6 pages)

Specifications of EV1320QI-E

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Company:

BOSTOCK HK LIMITED

Part Number:

EV1320QI-E

Manufacturer:

ALTERA

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Description

The EV1320QI is a DC to DC converter specifically

designed for memory termination applications. The

device offers high efficiency, up to 96%, while

providing a solution footprint similar to that of a linear

termination device.

The EV1320QI comes in a 3mm x 3mm x 0.55mm

QFN 16-pin package and requires only a small

number of external MLCC capacitors. The device is

designed to operate directly from the VDDQ supply

rail. No external divider or reference is required. The

EV1320QI provides a very stable output voltage

(VTT) which tracks VDDQ while sinking and sourcing

up to 2A of continuous output current. Up to 4

EV1320QI devices can be paralleled to source up to

8A of current. An ENABLE pin with output discharge

is available for S3 (suspend to RAM) states.

EV1320QI is specifically designed to meet the precise

voltage, fast transient requirements of present and

future high-performance, DDR2, DDR3, and low

power DDR4 JEDEC VTT requirements. Advanced

circuit techniques and high switching frequency

deliver high-quality, compact, non-isolated DC-DC

conversion.

06831

Figure 1. Simplified Applications Circuit

April 9, 2012

Features

•

Applications

• VTT Bus Termination for DDR2, DDR3, Low

High Efficiency, Up to 96%

40mm

No External Inductor Required

JEDEC Compliant DDR2/3/QDR and Low Power

DDR 4 Solution

Enable Pin with Output Discharge to Support S3

(Suspend to RAM) Mode

Operates Directly from VDDQ

VOUT (VTT) Voltage Tracks VDDQ/2 ± 40mV

Source and Sink Up to 2A Continuous Current

Parallel Up to 4 Devices for 8A VTT Current

Programmable Soft Start/Soft Shutdown

Cost Effective Integrated Solution

Thermal Overload, Over Current, Short Circuit,

and Under-Voltage Protection

RoHS Compliant, MSL level 3, 260C Reflow

Power DDR4, and QDR Memories

Figure 2. Highest Efficiency in Smallest Solution Size

2A Source/Sink DDR Memory

Total Solution Size

0.2 0.4

Efficiency vs. Output Current

Termination Converter

OUTPUT CURRENT (A)

0.6

VTT = 0.9V

VTT = 0.75V

VTT = 0.6V

0.8

1.2

CONDITIONS

VDDQ = 2* VTT

EV1320QI

www.enpirion.com

1.4

= 3.0V

1.6 1.8

Rev: C

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