M368L2923BTM-CCC SAMSUNG [Samsung semiconductor], M368L2923BTM-CCC Datasheet

no-image

M368L2923BTM-CCC

Manufacturer Part Number
M368L2923BTM-CCC
Description
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
256MB, 512MB, 1GB Unbuffered DIMM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
184pin Unbuffered Module based on 512Mb B-die
DDR SDRAM Unbuffered Module
* Samsung Electronics reserves the right to change products or specification without notice.
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
with 64/72-bit Non ECC/ECC
66 TSOP-II
Rev. 1.1 June 2005
DDR SDRAM

Related parts for M368L2923BTM-CCC

M368L2923BTM-CCC Summary of contents

Page 1

... Unbuffered DIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY ...

Page 2

... ECC Module (M381L2923BT(U)) ........................................................................................... 7.0 Absolute Maximum Ratings...................................................................................................... 11 8.0 DC Operating Conditions.......................................................................................................... 11 9.0 DDR SDRAM IDD spec table ..................................................................................................... 12 9.1 M368L3324BT(U) [ (32M x 16 256MB Non ECC Module ] 9.2 M368L6523BT(U) [ (64M 512MB Non ECC Module ] 9.3 M381L6523BT(U) [ (64M 512MB ECC Module ] 9.4 M368L2923BT(U) [ (64M 16, 1GB Non ECC Module ] 9 ...

Page 3

Unbuffered DIMM Revision History Revision Month Year 0.0 February 2003 1.0 August 2003 1.1 June 2005 - First version for internal review - Revision 1.0 spec release. - Deleted “B0, AA, A2” speed and changed master format. ...

Page 4

Unbuffered DIMM 184Pin Unbuffered DIMM based on 512Mb B-die (x8, x16) 1.0 Ordering Information Part Number M368L3324BT(U)M-C(L)CC/B3 M368L6523BT(U)M-C(L)CC M368L6523BT(U)N-C(L)B3 M381L6523BT(U)M-C(L)CC/B3 M368L2923BT(U)M-C(L)CC M368L2923BT(U)N-C(L)B3 M381L2923BT(U)M-C(L)CC/B3 Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P ...

Page 5

... Note : These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72 module ( M381~ ), and are not used on x64 module. 3. Pins 111, 158 are NC for 1row modules & used for 2row modules[ M368(81)L2923B ]. ...

Page 6

... Unbuffered DIMM 6.0 Functional Block Diagram 6.1 256MB, 32M x 64 Non ECC Module (M368L3324BT(U)) (Populated as 1 bank of x16 DDR SDRAM Module) CS0 LDQS DQS1 CS LDM DM1 DQ13 I/O 0 DQ14 I DQ12 I/O 2 DQ15 I/O 3 DQ9 I/O 4 DQ10 I/O 5 DQ8 I/O 6 DQ11 I/O 7 UDQS DQS0 UDM DM0 DQ0 ...

Page 7

... Unbuffered DIMM 6.2 512MB, 64M x 64 Non ECC Module (M368L6523BT(U)) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DQS4 DM0 DM4 DM/ CS DQS DQ0 I/O 6 DQ1 I DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 I/O 5 DQ6 I/O 3 DQ7 I/O 1 DQS1 DQS5 DM1 DM5 DM/ CS DQS ...

Page 8

... Unbuffered DIMM 6.3 512MB, 64M x 72 ECC Module (M381L6523BT(U)) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 6 DQ1 I DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 I/O 5 DQ6 I/O 3 DQ7 I/O 1 DQS1 DM1 DM/ CS DQS DQ8 I/O 7 DQ9 I DQ10 I/O 1 DQ11 ...

Page 9

... Unbuffered DIMM 6.4 1GB, 128M x 64 Non ECC Module (M368L2923BT(U)) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 I DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 DQS1 DM1 DM/ CS DQS DQ8 I/O 5 DQ9 I ...

Page 10

... Unbuffered DIMM 6.5 1GB, 128M x 72 ECC Module (M381L2923BT(U)) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 I DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 DQS1 DM1 DM/ CS DQS DQ8 I/O 7 DQ9 I DQ10 ...

Page 11

Unbuffered DIMM 7.0 Absolute Maximum Ratings Parameter Voltage on any pin relative Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device ...

Page 12

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC(DDR400@CL=3) B3(DDR333@CL=2.5) 660 760 20 120 100 220 400 920 1,120 1,060 ...

Page 13

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC(DDR400@CL=3) B0(DDR333@CL=2.5) 1,485 1,665 45 270 225 500 855 1,800 2,160 2,385 ...

Page 14

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC (DDR400@CL=3) B3 (DDR333@CL=2.5) 2,340 2,520 90 540 450 990 1,710 2,655 3,015 3,240 ...

Page 15

Unbuffered DIMM 10.0 AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK inputs Input Crossing Point ...

Page 16

Unbuffered DIMM 12.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data ...

Page 17

Unbuffered DIMM 13.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table ...

Page 18

Unbuffered DIMM 14.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications and ...

Page 19

Unbuffered DIMM 15.0 System Notes: a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. b. Pulldown slew rate is measured under the test conditions shown in Figure 3. c. Pullup slew ...

Page 20

Unbuffered DIMM 16.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge ...

Page 21

Unbuffered DIMM 17.0 Physical Dimensions 17.1 32M x 64 (M368L3324BT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx16 DDR SDRAM, TSOPII. DDR SDRAM ...

Page 22

Unbuffered DIMM 17.2 64Mx64 (M368L6523BT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 64Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H510838B 5.25 ...

Page 23

Unbuffered DIMM 17.3 64Mx72 (M381L6523BT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 64Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H510838B 5.25 ...

Page 24

Unbuffered DIMM 17.4 128Mx64 (M368L2923BT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 64Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H510838B 5.25 ...

Page 25

Unbuffered DIMM 17.5 128Mx72 (M381L2923BT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 64Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H510838B 5.25 ...

Related keywords