HS9-2100RH-8 INTERSIL [Intersil Corporation], HS9-2100RH-8 Datasheet

HS9-2100RH-8

Manufacturer Part Number

HS9-2100RH-8

Description

Radiation Hardened High Frequency Half Bridge Driver

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HS9-2100RH-8.pdf (2 pages)

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Radiation Hardened High Frequency

Half Bridge Driver

The Radiation Hardened HS-2100RH is a high frequency,

100V Half Bridge N-Channel MOSFET Driver IC, which is a

functional, pin-to-pin replacement for the Intersil HIP2500

and the industry standard 2110 types. The low-side and

high-side gate drivers are independently controlled. This

gives the user maximum ﬂexibility in dead-time selection and

driver protocol.

In addition, the device has on-chip error detection and

correction circuitry, which monitors the state of the high-side

latch and compares it to the HIN signal. If they disagree, a

set or reset pulse is generated to correct the high-side latch.

This feature protects the high-side latch from SEUs.

Undervoltage on the high-side supply forces HO low. When

that supply returns to a valid voltage, HO will go to the state

of HIN. Undervoltage on the low-side supply forces both LO

and HO low. When that supply becomes valid, LO returns to

the LIN state and HO returns to the HIN state.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for the HS-2100RH are

contained in SMD 5962-99536. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.asp

This link will not be available until the SMD is ﬁnalized.

Ordering Information

5962F9953601VXC

5962F9953601QXC

HS9-2100RH/Proto

ORDERING NUMBER

HS9-2100RH-Q

HS9-2100RH-8

HS9-2100RH/Proto

INTERSIL MKT.

NUMBER

Data Sheet

RANGE (

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

-55 to 125

TEMP.

Features

• Electrically Screened to DESC SMD # 5962-99536

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• Radiation Environment

• Bootstrap Supply Max Voltage to 120V

• Drives 1000pF Load at 1MHz with Rise and Fall Times of

• 1A (Typ) Peak Output Current

• Independent Inputs for Non-Half Bridge Topologies

• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)

• Operates with V

• Supply Undervoltage Protection

Applications

• High Frequency Switch-Mode Power Supplies

• Drivers for Inductive Loads

• DC Motor Drivers

Pinout

1-888-INTERSIL or 321-724-7143

- Maximum Total Dose . . . . . . . . . . . . . . 3 x 10

- DI RSG Process Provides Latch-up Immunity

- Vertical Architecture Provides Low Dose Rate Immunity

45ns (Typ)

COM

June 1999

FLATPACK (CDFP4-F16)

= V

HS-2100RH

TOP VIEW

Over 12V to 20V Range

File Number

HS-2100RH

Intersil Corporation 1999

4562.3

RAD(SI)

LIN

HIN

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HS9-2100RH-8 Summary of contents

Page 1

... This link will not be available until the SMD is ﬁnalized. Ordering Information INTERSIL MKT. ORDERING NUMBER NUMBER 5962F9953601VXC HS9-2100RH-Q 5962F9953601QXC HS9-2100RH-8 HS9-2100RH/Proto HS9-2100RH/Proto 1 June 1999 Features • Electrically Screened to DESC SMD # 5962-99536 • QML Qualiﬁed per MIL-PRF-38535 Requirements • Radiation Environment - Maximum Total Dose ...

Page 2

Die Characteristics DIE DIMENSIONS: 4710 m x 3570 m (186 mils x 141 mils) Thickness: 483 m 25.4 m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Å Å Thickness: 8.0k 1.0k Top Metallization: Type: ALSiCu ...

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