HS9-5104ARH-T INTERSIL [Intersil Corporation], HS9-5104ARH-T Datasheet
HS9-5104ARH-T
Manufacturer Part Number
HS9-5104ARH-T
Description
Radiation Hardened Low Noise Quad Operational Amplifier
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS9-5104ARH-T.pdf
(2 pages)
Radiation Hardened Low Noise Quad
Operational Amplifier
Intersil‘s Satellite Applications Flow
fully tested and guaranteed to 100kRAD total dose. These
QML Class T devices are processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The HS-5104ARH-T is a radiation hardened, monolithic
quad operational amplifier that provides highly reliable
performance in harsh radiation environments. Its excellent
noise characteristics coupled with a unique array of dynamic
specifications make this amplifier well-suited for a variety of
satellite system applications. Dielectrically isolated, bipolar
processing makes this device immune to Single Event
Latch-up.
The HS-5104ARH-T shows almost no change in offset
voltage after exposure to 100K RAD(Si) gamma radiation,
with only a minor increase in current. Complementing these
specifications is a post radiation open loop gain in excess of
40K.
This quad operational amplifier is available in an industry
standard pinout, allowing for immediate interchangeability
with most other quad operational amplifiers.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-5104ARH-T
are contained in SMD 5962-95690. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil‘s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
NOTE:
distribution, or 450 units direct.
5962R9569001TCC
HS1-5104ARH/Proto
5962R9569001TXC
HS9-5104ARH/Proto
ORDERING
Minimum order quantity for -T is 150 units through
NUMBER
HS1-5104ARH-T
HS1-5104ARH/Proto
HS9-5104ARH-T
HS9-5104ARH/Proto
1
NUMBER
PART
TM
Data Sheet
(SAF) devices are
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
-55 to 125
RANGE
TEMP.
(
o
C)
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
• Low Noise
• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 3.0mV (Max)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/ s (Typ)
• Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ)
Pinouts
www.intersil.com or 407-727-9207
- Gamma Dose ( ) 1 x 10
- No Latch-Up, Dielectrically Isolated Device Islands
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/ Hz (Typ)
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/ Hz (Typ)
OUT 1
OUT 2
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
+IN1
+IN2
-IN1
-IN2
V+
HS9-5104ARH-T (FLATPACK), CDFP3-F14
HS1-5104ARH-T (SBDIP), CDIP2-T14
July 1999
OUT 1
OUT 2
+IN1
+IN2
-IN1
-IN2
V+
1
2
3
4
5
6
7
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
5
|
RAD(Si)
HS-5104ARH-T
Copyright
File Number 4606.1
14
13
12
11
10
9
8
14
13
12
11
10
9
8
©
OUT 4
-IN4
+IN4
V-
+IN3
-IN3
OUT 3
Intersil Corporation 1999
OUT 4
-IN4
+IN4
V-
+IN3
-IN3
OUT 3
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HS9-5104ARH-T Summary of contents
Page 1
... At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/ Hz (Typ) • Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 3.0mV (Max) • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/ s (Typ) • Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ) Pinouts HS1-5104ARH-T (SBDIP), CDIP2-T14 OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 HS9-5104ARH-T (FLATPACK), CDFP3-F14 OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 TEMP. RANGE ...
Page 2
Die Characteristics DIE DIMENSIONS: (2420 m x 2530 m x 483 m 25 19mils 1mil METALLIZATION: Type Å Å Thickness: 16.0k 2k SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon Metallization Mask Layout ...