SCH4C60S WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SCH4C60S Datasheet

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SCH4C60S

Manufacturer Part Number
SCH4C60S
Description
Silicon Controlled Rectifiers
Manufacturer
WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Datasheet
Symbol
Symbol
R
R
Symbol
Symbol
Features
Features
Features
Features
General
General
General
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control cir
in power tool, inrush current limit circuit and heating control
system.
Thermal Characteristics
Jan 2009. Rev. 0
Symbol
V
I
I
I
I
di/dt
P
P
I
T
T
θJc
θJA
Absolute
Absolute
T(AV)
T(RMS)
TSM
2
FGM
Absolute
Absolute Maximum
J
STG
DRM
t
GM
G(AV)
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.6V(Typ.) @ I
Description
Description
Description
Maximum
Maximum
Maximum Ratings
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Repetitive Peak Off-State Voltage
R.M.S On-State Current(180°
Conduction Angle)
Surge On-State Current
I
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
Average On-State Current(180°
Conduction Angle)
2
t for Fusing
Condition P arameter
Ratings
Ratings
Ratings ( T
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T(RMS)
= 4 A )
J
= 25°C unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
TM
)
T
Tamb=25 °C
T
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Wave
Non-Repetitive
t =10ms
F=60Hz,Tj=125 °C
Tj=125
i
i
Silicon
Silicon
Silicon
Silicon Controlled
=60 °C
=60 °C
cuit
°C
Condition
Controlled
Controlled
Controlled Rectifiers
A
SCH4C60S
Ratings
-40-125
-40-150
Value
Value
Value
Value
100
1.2A
1.35
1.35
15
TO202-3
ngs
ngs
ngs
600
0.9
4.5
0.5
0.2
33
50
Rectifiers
4
Rectifiers
Rectifiers
°C
°C
℃/W
℃/W
G
Units
Units
Units
Units
Units
Units
Units
Units
A/㎲
A
°C
°C
W
W
V
A
A
A
A
2
1/5
s
K

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SCH4C60S Summary of contents

Page 1

... Tamb=25 °C T =60 °C i Tamb=25 °C 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t =10ms F=60Hz,Tj=125 °C Tj=125 °C Parameter Parameter Parameter Parameter SCH4C60S Controlled Controlled Rectifiers Rectifiers Controlled Rectifiers Rectifiers TO202-3 Ratings ngs ngs ngs Units Units Units Units ...

Page 2

... Test Test Conditions Conditions VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VD=12V,RL=140 VD=12V,RL=3.3KΩ, RGK=1 KΩ VD=67%V , RGK=1 KΩ DRM IT=50mA, RGK=1 KΩ IT=1mA, RGK=1 KΩ Tj=125°C SCH4C60S Value Value Value Value Units Units Units Units Min Min Min Min Typ ...

Page 3

... Characteristics Characteristics Characteristics Fig.5 Fig.5 dv/dt Fig.5 Fig.5 dv/dt VS dv/dt dv/ SCH4C60S Fig. Fig. Fig. Fig D(AV) D(AV) T(AV) T(AV) D(AV) D(AV) T(AV) T(AV) Fig. Fig. Fig. Fig ...

Page 4

... Fig. Fig. Fig. Fig On-state On-state On-state Characteristics On-state Characteristics Characteristics Characteristics SCH4C60S Fig.8 Fig.8 Fig.8 Fig Pulse Pulse Pulse duration Pulse duration duration duration θ θ θ θ 4/5 ...

Page 5

... Dimension Dimension Package Dimension Dimension Max Min Max Max Max Min Min Min 10.1 10.1 10.1 10.1 1.5 1.5 1.5 1.5 5.3 5.3 5.3 5.3 1.4 1.4 1.4 1.4 0.7 0.7 0.7 0.7 SCH4C60S Inch Inch Inch Inch Type Max Type Type Type Max Max Max 0.398 0.398 0.398 0.398 0.287 0.287 0.287 0.287 0.413 0.413 0.413 0.413 0.59 0.59 0.59 0.59 0.020 0.020 0.020 ...

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