BSP92P_07 INFINEON [Infineon Technologies AG], BSP92P_07 Datasheet

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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Type Package PG-SOT-223 BSP 92 P Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt ...

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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...

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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

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Power dissipation tot BSP 92 P 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...

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Typ. output characteristic parameter =25° 10V 6V 5V 0.8 4.6V 4.2V 3.6V 0.7 3.4V 3.2V 0.6 2.8V 2.6V 0.5 0.4 0.3 0.2 0 ...

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Drain-source on-state resistance DS(on) j parameter : I = -0. BSP 98 typ 4 0 -60 - Typ. capacitances C ...

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Typ. gate charge Gate parameter -0.26 A pulsed D BSP 92 P -16 V -12 -10 20% -8 50 Rev 2.4 14 ...

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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...