SPA11N60CFD_10 INFINEON [Infineon Technologies AG], SPA11N60CFD_10 Datasheet
SPA11N60CFD_10
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SPA11N60CFD_10 Summary of contents
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TM CoolMOS Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wave soldering T Electrical characteristics Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy 4) related Effective output capacitance, time 5) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate ...
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Parameter Reverse Diode Diode continuous forward current 2) Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Typical Transient Thermal Characteristics Symbol Value typ. R 0.0178 th1 R 0.0931 th2 R 0.228 th3 ...
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Power dissipation P =f(T ) tot Max. transient thermal impedance I =f =25 ° parameter: D 0.5 ...
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Typ. output characteristics I =f =150 ° parameter 10µ Drain-source on-state resistance R =f =10 ...
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Typ. gate charge V =f =11 A pulsed GS gate D parameter gate 11 Avalanche SOA I =f parameter: T j(start) ...
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Drain-source breakdown voltage V =f =10 mA BR(DSS 700 660 620 580 540 -60 - Typ. C stored energy oss E = f(V ) oss ...
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Typ. reverse recovery charge Q =f(I ); parameter: di/ dt =100 A/µ 1.2 1 0.8 0.6 125 °C 0.4 25 °C 0 Rev. 1.3 18 Typ. reverse recovery charge Q =f(di /dt ); ...
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Definition of diode switching characteristics Rev. 1.3 page 10 SPA11N60CFD 2010-01-12 ...
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PG-TO-220-3-31 (FullPAK) Rev. 1.3 page 11 SPA11N60CFD 2010-01-12 ...
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Published by Infineon Technologies AG D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights ...