SPA11N60CFD_1012 INFINEON [Infineon Technologies AG], SPA11N60CFD_1012 Datasheet - Page 3

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SPA11N60CFD_1012

Manufacturer Part Number
SPA11N60CFD_1012
Description
CoolMOS Power Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.4
0)
1)
2)
3)
4)
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
J-STD20 and JESD22
Limited only by maximum temperature.
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
C
C
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
4)
5)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
j,max
Symbol Conditions
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
plateau
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
f =1 MHz
V
to 480 V
V
V
R
V
V
page 3
GS
GS
DD
GS
DD
GS
G
=6.8
=0 V, V
=0 V, V
=480 V,
=10 V, I
=480 V, I
=0 to 10 V
DS
DS
D
oss
=11 A,
D
oss
=25 V,
=0 V
=11 A,
while V
while V
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
1200
typ.
390
7.5
30
45
85
34
18
43
23
48
7
9
SPA11N60CFD
max.
64
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
2010-12-21

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