SPA11N60CFD_1012 INFINEON [Infineon Technologies AG], SPA11N60CFD_1012 Datasheet - Page 7

• Manufacturer Part Number: SPA11N60CFD_1012
• Description: CoolMOS Power Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.4
9 Typ. gate charge
V
parameter: V
11 Avalanche SOA
I
parameter: T
AR
GS
=f(t
=f(Q
12
10
11
10
8
6
4
2
0
AR
9
8
7
6
5
4
3
2
1
0
10
0
)
gate
-3
); I
j(start)
DD
10
D
-2
=11 A pulsed
10
10
-1
20
Q
10
t
gate
AR
0
125 °C
[µs]
[nC]
10
30
1
120 V
25 °C
10
2
40
10
480 V
3
10
page 7
50
4
10 Forward characteristics of reverse diode
I
parameter: T
12 Avalanche energy
E
F
=f(V
AS
=f(T
10
350
300
250
200
150
100
10
10
10
50
SD
-1
0
2
1
0
20
j
)
); I
0
D
=5.5 A; V
j
0.5
60
150 °C
DD
=50 V
V
T
SD
100
j
25 °C, 98%
[°C]
1
25 °C
[V]
SPA11N60CFD
140
1.5
150 °C, 98%
2010-12-21
180
2