AT2 ZETEX [Zetex Semiconductors], AT2 Datasheet
AT2
Manufacturer Part Number
AT2
Description
SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
1.AT2.pdf
(1 pages)
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – JANUARY 1996
COMPLEMENTARY TYPE – BST15
PARTMAKING DETAIL — AT2
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
For typical characteristics graphs see FMMTA42 datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Input Capacitance
amb
=25°C
SYMBOL
V
V
V
I
I
V
V
h
f
C
C
EBO
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
MIN.
300
250
5
40
70
3 - 78
amb
SYMBOL
V
V
V
I
I
P
T
CM
C
= 25°C unless otherwise stated).
tot
j
CBO
CEO
EBO
:T
MAX.
10
20
0.5
1.3
2
30
stg
UNIT
V
V
V
nA
V
V
MHz
pF
pF
A
2%
-65 to +150
VALUE
300
250
500
5
1
1
CONDITIONS.
I
I
I
V
V
I
I
I
I
f=5MHz
V
V
C
C
E
C
C
C
C
=100 A, I
EB
CB
CB
EB
=100 A, I
=1mA, I
=50mA, I
=50mA, I
=20mA, V
=10mA, V
=5V, I
=5V, f=1MHz
=300V
=10V, f=1MHz
C
BST40
SOT89
B
E
=0*
=0
B
B
B
C
E
CE
CE
=4mA
=4mA
=0
=0
=10V*
=10V,
UNIT
C
mA
°C
W
V
V
V
A
E
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