HX6356 ETC1 [List of Unclassifed Manufacturers], HX6356 Datasheet

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HX6356

Manufacturer Part Number
HX6356
Description
32K x 8 STATIC RAM-SOI
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
Aerospace Electronics
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
• Total Dose Hardness through 1x10
• Neutron Hardness through 1x10
• Dynamic and Static Transient Upset Hardness
• Dose Rate Survivability through 1x10
• Soft Error Rate of <1x10
• Latchup Free
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V ±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µm
effective gate length—L
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.
0.75 µm Process (L
through 1x10
in Geosynchronous Orbit
11
rad(Si)/s
eff
= 0.6 µm)
eff
-10
). Additional features include
IV Silicon on Insulator (SOI)
upsets/bit-day
14
cm
6
IV (Radiation Insen-
rad(SiO
-2
12
rad(Si)/s
IV process is a
2
)
OTHER
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
• Typical Operating power < 15 mW/MHz
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Packaging Options
≤ 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
HX6356

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HX6356 Summary of contents

Page 1

... Typical Operating power < 15 mW/MHz • Asynchronous Operation 12 rad(Si)/s • CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply • Packaging Options - 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.) - 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.) ™ IV (Radiation Insen- ™ IV process is a HX6356 ...

Page 2

... HX6356 FUNCTIONAL DIAGRAM A:0-8,12- NCS NWE NOE A:9-11 SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. DQ: 0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. NCS Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers except CE ...

Page 3

... Limits (2) Units ≥1x10 6 rad(SiO ≥1x10 11 rad(Si)/s ≥1x10 12 rad(Si)/s -10 <1x10 upsets/bit-day ≥1x10 14 N/cm 3 HX6356 Test Conditions ) T =25° Pulse width ≤1 µs Pulse width ≤50 ns, X-ray, VDD=6 =25° =125°C, Adams 90% A worst case environment 1 MeV equivalent energy, 2 Unbiased, T =25° ...

Page 4

... HX6356 ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Positive Supply Voltage (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 Seconds) PD Total Package Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input Protection Voltage (4) Θ JC Thermal Resistance (Jct-to-Case) ...

Page 5

... V -0.1 DD 2.9 V Valid high + output Vref1 - 249Ω Vref2 + Valid low - output C L >50 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ 5 HX6356 Units Test Conditions Max VIH=VDD, IO=0 1.5 mA VIL=VSS, f=0MHz NCS=VDD, IO=0, 1.5 mA f=40 MHz f=1 MHz, IO=0, CE=VIH=VDD 4.0 mA NCS=VIL=VSS (3) f=1 MHz, IO=0, CE=VIH=VDD 4.0 mA NCS=VIL=VSS (3) µA +1 VSS≤VI≤VDD VSS≤ ...

Page 6

... HX6356 READ CYCLE AC TIMING CHARACTERISTICS ( ...

Page 7

... AVAVW T T WLWH T WLQZ T SLWH T EHWH 7 HX6356 ...

Page 8

... HX6356 DYNAMIC ELECTRICAL CHARACTERISTICS Read Cycle The RAM is asynchronous in operation, allowing the read cycle to be controlled by address, chip select (NCS), or chip enable (CE) (refer to Read Cycle timing diagram). To perform a valid read operation, both chip select and output enable (NOE) must be low and chip enable and write enable (NWE) must be high ...

Page 9

... Groups B & D testing as outlined in MIL-STD-883, TM 5005, Class S. The product is qualified by following a screening and testing flow to meet the customer’s requirements. Quality conformance testing is performed as an option on all production lots to ensure the ongoing reliability of the product. 9 HX6356 CMOS I/O Configuration VDD/2 0.5 V VDD/2 VDD-0.4V High Z ...

Page 10

... HX6356 PACKAGING The 32K x 8 SRAM is offered in two custom 36-lead flat packs (FP). The packages are constructed of multilayer ceramic ( and feature internal power and ground 2 3 planes. The 36-lead flat packs also feature a non-conduc- tive ceramic tie bar on the lead frame. The tie bar allows ...

Page 11

... F17 VSS 11 HX6356 b (width) e (pitch) All dimensions are in inches A 0.085 ± 0.010 b 0.008 ± 0.002 C 0.005 to 0.0075 D 0.650 ± 0.010 E 0.630 ± 0.007 e 0.025 ± 0.002 [ 0.425 ± 0.005 [2] G 0.525 ± 0.005 H 0.135 ± ...

Page 12

... HX6356 ORDERING INFORMATION ( 6356 PART NUMBER PROCESS X=SOI PACKAGE DESIGNATION X=36-Lead FP (Bottom Braze) SOURCE P=36-Lead FP (Top Braze) H=HONEYWELL K=Known Good Die - = Bare Die (No Package) (1) Orders may be faxed to 612-954-2051. Please contact our Customer Logistics Department at 612-954-2888 for further information. (2) Engineering Device description: Parameters are tested from -55 to 125° burn-in, no radiation guaranteed. ...

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