HX6656 ETC1 [List of Unclassifed Manufacturers], HX6656 Datasheet

no-image

HX6656

Manufacturer Part Number
HX6656
Description
32K x 8 ROM-SOI
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
Military & Space Products
32K x 8 ROM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
• Total Dose Hardness through 1x10
• Dynamic and Static Transient Upset
• Dose Rate Survivability through 1x10
• Neutron Hardness through 1x10
• SEU Immune
• Latchup Free
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened ROM is a high perform-
ance 32,768 word x 8-bit read only memory with industry-
standard functionality. It is fabricated with Honeywell’s
radiation hardened technology, and is designed for use in
systems operating in radiation environments. The ROM
operates over the full military temperature range and re-
quires only a single 5 V ± 10% power supply. The ROM is
available with either TTL or CMOS compatible I/O. Power
consumption is typically less than 15 mW/MHz in operation,
and less than 5 mW when de-selected. The ROM operation
is fully asynchronous, with an associated typical access
time of 14 ns.
Honeywell’s enhanced SOI RICMOS
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout, and pro-
cess hardening techniques. The RICMOS
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µm
effective gate length—L
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability.
(SOI) 0.75 µm Process (L
Hardness through 1x10
eff
9
). Additional features include
rad(Si)/s
eff
IV Silicon on Insulator
= 0.6 µm)
14
cm
6
IV (Radiation Insen-
rad(SiO
11
-2
rad(Si)/s
IV process is a
2
)
OTHER
• Read Cycle Times
• Typical Operating Power <15 mW/MHz
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Packaging Options
< 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
HX6656

Related parts for HX6656

HX6656 Summary of contents

Page 1

... Asynchronous Operation 11 rad(Si)/s • CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply cm -2 • Packaging Options - 28-Lead Flat Pack (0.500 in. x 0.720 in.) - 28-Lead DIP, MIL-STD-1835, CDIP2-T28 - 36-Lead Flat Pack (0.630 in. x 0.650 in.) ™ IV (Radiation Insen- ™ IV process is a HX6656 ...

Page 2

... HX6656 FUNCTIONAL DIAGRAM A:0-8,12- NCS NO E A:9-11,14 4 SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. Q: 0-7 Data Output Pins. NCS Negative chip select, when at a low level allows normal read operation. When at a high level NCS forces the ROM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers except CE ...

Page 3

... SCR latchup structures. Sufficient transistor body tie con- nections to the p- and n-channel substrates are made to ensure no source/drain snapback occurs. Limits (2) Units ≥1x10 6 rad(SiO ≥1x10 9 rad(Si)/s ≥1x10 11 rad(Si)/s ≥1x10 14 N/cm 3 HX6656 applied 2 . Test Conditions ) T =25° Pulse width ≤1 µs Pulse width ≤50 ns, X-ray, VDD=6 =25°C A ...

Page 4

... HX6656 ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Positive Supply Voltage (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature • Time PD Total Package Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input Protection Voltage (4) Θ Thermal Resistance (Jct-to-Case) ...

Page 5

... V -0.05 DD 2.9 V Valid high + output Vref1 - 249Ω Vref2 + Valid low - output C L >50 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ 5 HX6656 (2) Units Test Conditions Max VIH=VDD IO=0 1.5 mA VIL=VSS Inputs Stable NCS=VDD, IO=0, 1.5 mA f=40 MHz f=1 MHz, IO=0, CE=VIH=VDD 4.0 mA NCS=VIL=VSS µA +1 VSS≤VI≤VDD VSS≤VIO≤VDD µ ...

Page 6

... HX6656 READ CYCLE AC TIMING CHARACTERISTICS (1) Symbol Parameter TAVAVR Address Read Cycle Time TAVQV Address Access Time TAXQX Address Change to Output Invalid Time TSLQV Chip Select Access Time TSLQX Chip Select Output Enable Time TSHQZ Chip Select Output Disable Time TEHQV Chip Enable Access Time (4) ...

Page 7

... CE is high will initiate a new read access, and data outputs will not become valid until TAVQV time following the address edge transition. Data outputs will enter a high impedance state TELQZ time following a disabling CE edge transition. 7 HX6656 ...

Page 8

... HX6656 TESTER AC TIMING CHARACTERISTICS Input Levels* Output Sense Levels * Input rise and fall times <1 ns/V QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a com- plete “Total Quality Assurance System,” a computer data base process performance tracking system, and a radia- tion-hardness assurance strategy ...

Page 9

... DQ6 NC DQ5 VDD VSS DQ4 DQ3 E 22018131-001 Top View L Non- Kovar Conductive Lid [3] Tie-Bar N Optional VDD VSS Capacitors VSS HX6656 36-LEAD FP PINOUT Top View ...

Page 10

... HX6656 28-LEAD FLAT PACK (22017842-001 TOP VIEW L W Capacitor X Y Kovar A Lid [ 28-LEAD DIP (22017785-001) For 28-Lead DIP description, see MIL-STD-1835, Type CDIP2-T28, Config. C, Dimensions D-10 b (width) BOTTOM e VIEW (pitch Pads Ceramic Body Lead C Alloy 42 [ Index ...

Page 11

... F12 R 24 F11 R 23 F10 R 22 F17 F17 VSS R 11 HX6656 STATIC BURN-IN DIAGRAM* VDD 28 1 A14 VDD A12 A13 ...

Page 12

... HX6656 ORDERING INFORMATION (1) H 6656 X PART NUMBER PROCESS PACKAGE DESIGNATION X=SOI SOURCE H=HONEYWELL - = Bare die (No Package) (1) Orders may be faxed to 612-954-2051. Please contact our Customer Logistics Department at 612-954-2888 for further information. (2) Engineering Device description: Parameters are tested from -55 to 125° burn-in, no radiation guaranteed. ...

Related keywords