ZEN056V130A24CE MACOM [Tyco Electronics], ZEN056V130A24CE Datasheet - Page 3

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ZEN056V130A24CE

Manufacturer Part Number
ZEN056V130A24CE
Description
Polymer Enhanced Zener Diode Micro-Assemblies
Manufacturer
MACOM [Tyco Electronics]
Datasheet

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DEFINITION of TERMS
GENERAL SPECIFICATIONS
TYPICAL ELECTRICAL CHARACTERISTICS
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
Endurance
Trip Event
5.45
Min
Trip
I
I
I
OUT
PTC
FLT
5.60
Typ
V
(V)
This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and
may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE
Connectivity Circuit Protection Division directly.
Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
I
I
specified temperature. Specification assumes I
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
R Typ: Resistance between V
R
reflow soldering.
V
least 100 trip cycles and 24 hours trip endurance at the specified voltage and current (I
a "shorted" load (V
I
dependent on the direction of current flow through the diode. RMS fault currents above I
PolyZen device. Specification assumes I
Electrical characteristics determined at 25ºC unless otherwise specified.
zt
HOLD
FLT
Z
INT
1Max
4
is the current at which V
Max: Maximum RMS fault current the diode portion of the device can withstand and remain resettable. Specification is
Max: V
: Maximum steady state I
: The maximum resistance between V
Current flowing through the PTC portion of the
circuit
RMS fault current flowing through the diode
Current flowing out the V
A condition where the PTC transitions to a high
resistance state, thereby significantly limiting I
and related currents.
Time the PTC portion of the device remains in a
high resistance state.
5.75
Max
INT
Max is defined as the voltage at which typical qualification devices (98% devices, 95% confidence) survived at
(A)
0.1
I
zt
4
OUT
= 0 V). V
@ 20
Over-Voltage Circuit Protection Products
I
z
HOLD
(A)
1.3
is measured (V
o
IN
PTC
5
C
Polymer Enhanced Zener Diode
INT
and V
(current entering or exiting the V
Operating Temperature
Storage Temperature
Max is a survivability rating, not a performance rating. For performance ratings, see Note 2.
OUT
Leakage Current
Voltage
OUT
pin of the device
Test
5.25
(V)
Micro-Assemblies
OUT
pins during normal operation at room temperature.
Z
IN
PolyZen
= V
= 0. Testing conducted with no load connected to V
and V
Current
FLT
(m A)
OUT
10.0
Max
(current flowing through the Zener diode) is sufficiently low so as to prevent
OUT
). Additional V
1-3, 11
pins at room temperature, one hour after first tripped event or after
(Ohm s)
0.07
R
PTC
Typ
(Typical unless otherwise specified)
6
(Ohm s)
Z
0.105
IN
R1
-40º to +85ºC
-40º to +85ºC
values are available on request.
pin of the device) that will not generate a trip event at the
Max
V
V
7
IN
IN
V
INT
(V)
24
Max
V
Int
I
I
PTC
PTC
Max
Current
DOCUMENT: SCD28167
REV LETTER: A
REV DATE: JUNE 08, 2012
PAGE NO.: 3 OF 8
PRODUCT: ZEN056V130A24CE
Test
(A)
, I
, I
8
3
PTC
I
I
FLT
FLT
FLT
HOLD
HOLD
). V
Max may permanently damage the
I
GND
GND
FLT
INT
+10
-40
(A)
Max
Max testing is conducted using
OUT.
I
FLT
Max
Voltage
I
I
Test
OUT
OUT
+24
-16
(V)
9
Pow er
Tripped Pow er
Dissipation
(W)
1
V
V
OUT
OUT
Voltage
Test
(V)
24
10

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