CMT2N7002 Champion Microelectronic Corp., CMT2N7002 Datasheet
CMT2N7002
Manufacturer Part Number
CMT2N7002
Description
Manufacturer
Champion Microelectronic Corp.
Datasheet
1.CMT2N7002.pdf
(6 pages)
Specifications of CMT2N7002
Date_code
05+
Packing_info
SOT-23
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMT2N7002
Manufacturer:
CHAMPION台湾虹冠
Quantity:
20 000
Company:
Part Number:
CMT2N7002G
Manufacturer:
CHAMPIO
Quantity:
2 427
Part Number:
CMT2N7002G
Manufacturer:
CHAMPION台湾虹冠
Quantity:
20 000
Part Number:
CMT2N7002X
Manufacturer:
CHAMPION台湾虹冠
Quantity:
20 000
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance.
It can be used in most applications requiring up to 115mA DC
and can deliver pulsed currents up to 800mA. This product is
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications.
PIN CONFIGURATION
SOT-23, SOT-323
ORDERING INFORMATION
CMT2N7002
CMT2N7002G*
CMT2N7002WG*
CMT2N7002DWG*
CMT2N7002X*
CMT2N7002WX*
CMT2N7002DWX*
*Note:
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage
Drain-Gate Voltage (R
Drain to Current － Continuous
Gate-to-Source Voltage － Continue
Total Power Dissipation
Single Pulse Drain-to-Source Avalanche Energy － T
(V
Operating and Storage Temperature Range
Thermal Resistance － Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2009/07/17
DD
1
Derate above 25℃
Top View
= 50V, V
3
G : Suffix for Pb Free Product
2
Part Number
Rev. 1.8
GS
= 10V, I
－ Pulsed
GS
AS
－ Non-repetitive
= 1.0MΩ)
= 0.8A, L = 30mH, R
D2
S2
Top View
SOT-363
Rating
G1
G2
W: Suffix for Package SOT-323
Champion Microelectronic Corporation
S1
D1
G
= 25Ω)
Package
SOT-323
SOT-363
SOT-323
SOT-363
SOT-23
SOT-23
SOT-23
J
= 25℃
FEATURES
SYMBOL
High Density Cell Design for Low R
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
X : Suffix for Halogen Free Product
S
Symbol
T
MALL
J
V
V
V
V
E
, T
G
I
θ
P
T
N-Channel MOSFET
GSM
DGR
I
DM
DSS
GS
AS
JA
D
D
L
STG
S
IGNAL
-55 to 150
Value
CMT2N7002
S
D
115
800
±20
±40
225
417
300
1.8
9.6
60
60
DS(ON)
MOSFET
Page 1
mW/℃
℃/W
Unit
mW
mA
mJ
℃
℃
V
V
V
V
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