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High-Bandwidth Data Path (up to 500 MHz
5-V Tolerant I/Os With Device Powered Up or
Powered Down
Low and Flat ON-State Resistance (r
Characteristics Over Operating Range
(r
= 4
Typ)
on
Rail-to-Rail Switching on Data I/O Ports
– 0- to 5-V Switching With 3.3-V V
– 0- to 3.3-V Switching With 2.5-V V
Bidirectional Data Flow With Near-Zero
Propagation Delay
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(C
= 3.5 pF Typ)
io(OFF)
Fast Switching Frequency (f
OE
(1) For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI application
report CBT-C, CB3T, and CB3Q Signal-Switch Families,
literature number SCDA008.
DBQ, DGV, OR PW PACKAGE
(TOP VIEW)
1OE
1
S1
2
1B4
3
1B3
4
1B2
5
1B1
6
1A
7
GND
8
DESCRIPTION/ORDERING INFORMATION
The SN74CB3Q3253 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of
the pass transistor, providing a low and flat ON-state resistance (r
for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device
also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the SN74CB3Q3253 provides an optimized
interface solution ideally suited for broadband communications, networking, and data-intensive computing
systems.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER
2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH
Data and Control Inputs Provide Undershoot
Clamp Diodes
)
(1)
Low Power Consumption (I
V
Operating Range From 2.3 V to 3.6 V
CC
)
Data I/Os Support 0- to 5-V Signal Levels (0.8
on
V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can be Driven by TTL or
5-V/3.3-V CMOS Outputs
I
Supports Partial-Power-Down Mode
CC
off
Operation
CC
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model (A114-B,
Class II)
= 20 MHz Max)
– 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog
Applications: USB Interface, Differential
Signal Interface Bus Isolation, Low-Distortion
Signal Gating
RGY PACKAGE
V
16
CC
2OE
15
S0
14
S1
2
2B4
13
1B4
3
2B3
12
1B3
4
2B2
11
1B2
5
2B1
10
1B1
6
9
2A
1A
7
). The low and flat ON-state resistance allows
on
SN74CB3Q3253
SCDS145A – OCTOBER 2003 – REVISED MARCH 2005
= 0.6 mA Typ)
CC
(TOP VIEW)
1
16
15
2OE
14
S0
13
2B4
12
2B3
11
2B2
10
2B1
8
9
Copyright © 2003–2005, Texas Instruments Incorporated