EM636327TQ-8 Etron Technology Inc., EM636327TQ-8 Datasheet

EM636327TQ-8

Manufacturer Part Number

EM636327TQ-8

Description

Manufacturer

Etron Technology Inc.

Datasheets

1.EM636327TQ-8.pdf (78 pages)

2.EM636327TQ-8.pdf (78 pages)

Specifications of EM636327TQ-8

Case

TQFP/100

Date_code

99+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

EM636327TQ-8

Manufacturer:

ETRON

Quantity:

1 000

Company:

BOSTOCK HK LIMITED

Part Number:

EM636327TQ-8

Manufacturer:

ETRON

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

EM636327TQ-8

Manufacturer:

ETRONTECH

Quantity:

20 000

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Features

Overview

CMOS synchronous graphics DRAM containing 16

Mbits. It is internally configured as a dual 256K x

32 DRAM with a synchronous interface (all signals

are registered on the positive edge of the clock

signal, CLK). Each of the 256K x 32 bit banks is

organized as 1024 rows by 256 columns by 32 bits.

Read and write accesses to the SGRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in

a programmed sequence. Accesses begin with the

registration of a BankActivate command which is

then followed by a Read or Write command.

Read or Write burst lengths of 1, 2, 4, 8, or full

Etron Technology, Inc.

1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C

TEL: (886)-3-5782345 FAX: (886)-3-5779001

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

Fast access time from clock: 5/5/5.5/6.5/7.5 ns

Fast clock rate: 183/166/143/125/100 MHz

Fully synchronous operation

Internal pipelined architecture

Dual internal banks(256K x 32-bit x 2-bank)

Programmable Mode and Special Mode registers

- CAS# Latency: 1, 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst-Read-Single-Write

- Load Color or Mask register

Burst stop function

Individual byte controlled by DQM0-3

Block write and write-per-bit capability

Auto Refresh and Self Refresh

2048 refresh cycles/32ms

Single +3.3V 0.3V power supply

Interface: LVTTL

JEDEC 100-pin Plastic package

-QFP (body thickness=2.8mm)

-TQFP1.4 (body thickness=1.4mm)

-TQFP1.0 (body thickness=1.0mm)

512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

The EM636327 SGRAM is a high-speed

The EM636327 provides for programmable

Key Specifications

Ordering Information

page, with a burst termination option. An auto

precharge function may be enabled to provide a

self-timed row precharge that is initiated at the end

of the burst sequence. The refresh functions,

either Auto or Self Refresh are easy to use. In

addition, EM636327 features the write-per-bit and

the masked block write functions.

special mode register, the system can choose the

most suitable modes to maximize its performance.

These devices are well suited for applications

requiring high memory bandwidth, and when

combined with special graphics functions result in

performance graphics applications.

CK3

RAS

AC1

AC3

EM636327Q-10

EM636327R-10

EM636327TQ-10

EM636327JT-10

EM636327Q-8

EM636327R-8

EM636327TQ-8

EM636327JT-8

EM636327Q-7

EM636327TQ-7

EM636327Q-6

EM636327TQ-6

EM636327Q-55

EM636327TQ-55

Part Number

device

By having a programmable mode register and

Clock Cycle time(min.)

Row Active time(max.)

Access time from Read command

Access time from CLK(max.)

Row Cycle time(min.)

EM636327

particularly

Frequency

100MHz

125MHz

143MHz

166MHz

183MHz

well

Preliminary (12/98)

EM636327

suited

QFP (Reverse)

Package

TQFP1.4

TQFP1.0

TQFP1.4

TQFP1.0

TQFP1.4

32/36/42/48/60 ns

48/54/63/72/90 ns

5/5/5.5/6.5/7.5 ns

7/8/13/18/23 ns

5.5/6/7/8/10 ns

QFP

- 55/6/7/8/10

high

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