EDS2532AABH-75-E Elpida Memory, Inc., EDS2532AABH-75-E Datasheet
EDS2532AABH-75-E
Manufacturer Part Number
EDS2532AABH-75-E
Description
Mobile SDRAM 8Mx32, 133MHz, 3.3V, FBGA90, leadfree
Manufacturer
Elpida Memory, Inc.
Specifications of EDS2532AABH-75-E
Package
Tray/JP
Unit
1045
Date_code
04+
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EDS2532AABH-75-E
Manufacturer:
ELPIDA
Quantity:
714
Part Number:
EDS2532AABH-75-E
Manufacturer:
ELPIDA
Quantity:
20 000
Specifications
• Density: 256M bits
• Organization
⎯ 2M words × 32 bits × 4 banks
• Package: 90-ball FBGA
⎯ Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 3.3V ± 0.3V
• Clock frequency: 133MHz (max.)
• 2KB page size
⎯ Row address: A0 to A11
⎯ Column address: A0 to A8
• Four internal banks for concurrent operation
• Interface: LVTTL
• Burst lengths (BL): 1, 2, 4, 8, full page
• Burst type (BT):
⎯ Sequential (1, 2, 4, 8, full page)
⎯ Interleave (1, 2, 4, 8)
• /CAS Latency (CL): 2, 3
• Precharge: auto precharge operation for each burst
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 4096 cycles/64ms
⎯ Average refresh period: 15.6μs
• Operating ambient temperature range
⎯ TA = 0°C to +70°C
Features
• ×32 organization
• Single pulsed /RAS
• Burst read/write operation and burst read/single write
• Byte control by DQM
Document No. E0493E40 (Ver. 4.0)
Date Published December 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
access
operation capability
EDS2532AABH-75 (8M words × 32 bits)
256M bits SDRAM
This product became EOL in March, 2007.
DATA SHEET
Pin Configurations
/xxx indicates active low signal.
M
G
A
B
C
D
E
H
K
N
P
R
F
J
L
A0 to A11
BA0, BA1
DQ0 to DQ31
/CS
/RAS
/CAS
/WE
DQM0 to DQM3
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
VDDQ
DQM1 NC
VDDQ DQ8
VSSQ
VSSQ
VSSQ DQ10 DQ9
VSSQ DQ12 DQ14
DQ26
DQ28
DQ11 VDDQ VSSQ
DQ13 DQ15 VSS
VSS
CLK
A4
A7
1
VDDQ
DQM3
DQ24
DQ27
DQ29
DQ31
CKE
A5
A8
2
VSSQ
DQ25
DQ30
VSS
VSS
NC
NC
NC
A3
A6
A9
3
90-ball FBGA
4
(Top view)
Address inputs
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
DQ mask enable
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
5
©Elpida Memory, Inc. 2004-2005
6
VDDQ
VDDQ VSSQ DQ4
DQ22
DQ17
/CAS
VDD
VDD
DQ6
DQ1
VDD
A10
BA0
NC
NC
A2
7
DQM2
VSSQ
DQ23
DQ20
DQ18
DQ16
DQ7 VSSQ
DQ5 VDDQ
DQ3 VDDQ
DQ0
BA1
/WE DQM0
/CS
A0
8
VDDQ
VDDQ
VSSQ
DQ21
DQ19
/RAS
VDD
DQ2
A11
A1
9
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