STP80NF12_07 STMICROELECTRONICS [STMicroelectronics], STP80NF12_07 Datasheet

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STP80NF12_07

Manufacturer Part Number
STP80NF12_07
Description
N-channel 120V - 0.013ohm - 80A - TO-220 STripFET TM II Power MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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General features
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
January 2007
STP80NF12
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
Type
Part number
STP80NF12
(@Tjmax)
V
120V
DSS
<0.018Ω
R
DS(on)
P80NF12
Marking
N-channel 120V - 0.013Ω - 80A - TO-220
80A
I
D
(1)
Rev 4
Internal schematic diagram
STripFET™ II Power MOSFET
Package
TO-220
TO-220
STP80NF12
1
2
Packaging
3
Tube
www.st.com
1/12
12

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STP80NF12_07 Summary of contents

Page 1

General features V DSS Type (@Tjmax) STP80NF12 120V ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STP80NF12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (3) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STP80NF12 Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STP80NF12 ...

Page 7

STP80NF12 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized B VDSS ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STP80NF12 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM L20 L30 øP Q 10/12 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 ...

Page 11

STP80NF12 5 Revision history Table 7. Revision history Date 21-Jun-2004 24-Jul-2006 31-Jan-2007 Revision 2 Preliminary version 3 The document has been reformatted, SOA updated 4 Typo mistake on Table Revision history Changes 1. 11/12 ...

Page 12

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...

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