IRFZ44R_11 VISHAY [Vishay Siliconix], IRFZ44R_11 Datasheet

IRFZ44R_11

Manufacturer Part Number

IRFZ44R_11

Description

Power MOSFET

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.IRFZ44R_11.pdf (9 pages)

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

e. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91292

S11-0517-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Soldering Recommendations (Peak Temperature)

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

≤ 51 A, dV/dt ≤ 250 A/μs, V

= 25 V, starting T

(Ω)

TO-220AB

= 25 °C, L = 44 μH, R

≤ V

= 10 V

N-Channel MOSFET

, T

Single

≤ 175 °C.

This datasheet is subject to change without notice.

= 25 Ω, I

= 25 °C, unless otherwise noted)

Power MOSFET

0.028

6-32 or M3 screw

at 10 V

= 51 A (see fig. 12).

for 10 s

= 25 °C

TO-220AB

IRFZ44RPbF

SiHFZ44R-E3

IRFZ44R

SiHFZ44R

= 100 °C

= 25 °C

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Linear/Audio Applications

SYMBOL

dV/dt

, T

techniques

stg

IRFZ44R, SiHFZ44R

- 55 to + 175

LIMIT

± 20

200

100

150

300

1.0

4.5

1.1

achieve

www.vishay.com/doc?91000

Vishay Siliconix

extremely

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

low

Related parts for IRFZ44R_11

IRFZ44R_11 Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration TO-220AB G D N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (T PARAMETER ...

IRFZ44R, SiHFZ44R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91292 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 4

IRFZ44R, SiHFZ44R Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 ...

Page 6

IRFZ44R, SiHFZ44R Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

D.U. Driver gate drive D.U.T. l Rever e recovery current D.U.T. V Re-applied voltage Inductor current Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability ...

Page 8

TO-220AB b( e(1) Document Number: 71195 Revison: 01-Nov-10 A DIM Ø b( e(1) F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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