2SK4070-S15-AY NEC [NEC], 2SK4070-S15-AY Datasheet

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2SK4070-S15-AY

Manufacturer Part Number
2SK4070-S15-AY
Description
MOS FIELD EFFECT TRANSISTOR
Manufacturer
NEC [NEC]
Datasheet

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Part Number:
2SK4070-S15-AY
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Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
<R>
• Low on-state resistance
• Low gate charge
• Gate voltage rating : ±30 V
• Avalanche capability ratings
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
DESCRIPTION
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
ORDERING INFORMATION
2SK4070-S15-AY
2SK4070(1)-S27-AY
2SK4070-ZK-E1-AY
2SK4070-ZK-E2-AY
R
Q
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DS(on)
G
= 5 nC TYP. (V
PART NUMBER
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting T
= 11 Ω MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
μ
Note
Note
ch
Note
DD
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 450 V, V
= 25°C)
GS
Note3
Note3
DS
C
A
GS
= 10 V, I
= 25°C)
= 25°C)
= 0 V)
= 0 V)
LEAD PLATING
Pure Sn (Tin)
DD
GS
N-CHANNEL POWER MOS FET
= 150 V, R
D
Note2
= 10 V, I
= 0.5 A)
The mark <R> shows major revised points.
A
P
V
V
I
I
P
T
T
I
E
= 25°C)
D(DC)
D(pulse)
AS
DSS
GSS
T1
T2
ch
stg
D
AS
G
= 1.0 A)
= 25 Ω, V
DATA SHEET
SWITCHING
Tube 70 p/tube
Tube 75 p/tube
Tape 2500 p/reel
PACKING
GS
−55 to +150
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
±1.0
±4.0
38.4
600
±30
150
1.0
0.8
22
TO-252 (MP-3ZK) typ. 0.27 g
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE
2SK4070
(TO-251)
(TO-252)
2006

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2SK4070-S15-AY Summary of contents

Page 1

... • Gate voltage rating : ±30 V • Avalanche capability ratings ORDERING INFORMATION <R> PART NUMBER LEAD PLATING Note 2SK4070-S15-AY Note 2SK4070(1)-S27-AY Pure Sn (Tin) Note 2SK4070-ZK-E1-AY Note 2SK4070-ZK-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... V F(S- 1 μ di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ Duty Cycle ≤ 1% Data Sheet D18785EJ2V0DS 2SK4070 MIN. TYP. MAX. UNIT μ 100 A ±100 nA 2.5 2.9 3.5 V 0.2 0.4 S Ω 9.2 11 110 7 ...

Page 3

... T DRAIN CURRENT vs. CASE TEMPERATURE 1.2 1 0.8 0.6 0.4 0 1000 125 th(ch- 5.68 th(ch- 100 Pulse Width - s Data Sheet D18785EJ2V0DS 2SK4070 50 75 100 125 150 - Case Temperature - ° 100 125 150 - Case Temperature - °C C °C/Wi °C/Wi Single pulse 100 1000 3 ...

Page 4

... V DS Pulsed 1 0.1 0.01 150 0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 14 Pulsed 0.01 Data Sheet D18785EJ2V0DS 2SK4070 = −55° −25°C 25°C 75°C 125°C 150° Gate to Source Voltage - V = −55° −25°C 25°C 75° ...

Page 5

... DD 250 V 500 150 V 400 300 200 100 – Gate Chage - nC G REVWESE RECOVERY TIME vs. DRAIN CURRENT 1000 100 10 0.1 1 1.2 I – Diode Forward Current - A F 2SK4070 C iss C oss C rss 10 100 1 ...

Page 6

... 38 0.1 0.01 0 Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 100 Starting Channel Temperature - °C Starting T ch Data Sheet D18785EJ2V0DS 2SK4070 V = 150 Ω → ≤ 0 100 125 150 ...

Page 7

... No Plating 1.14 MAX. 0.76±0.12 2.3 TYP. 0.5 ±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT 2.3±0.1 0.5±0.1 No Plating Gate 0 to 0.25 0.5±0.1 1.0 Data Sheet D18785EJ2V0DS 2SK4070 2.3±0.1 6.6±0.2 5.3 TYP. 0.5±0 0.5±0.1 2.3 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK4070 Not all M8E 02. 11-1 ...

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