K6X4016C3F-F SAMSUNG [Samsung semiconductor], K6X4016C3F-F Datasheet - Page 5

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K6X4016C3F-F

Manufacturer Part Number
K6X4016C3F-F
Description
256Kx16 bit Low Power full CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
AC CHARACTERISTICS
( Vcc=4.5~5.5V, Commercial Product: T
DATA RETENTION CHARACTERISTICS
K6X4016C3F Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
Read
Write
Item
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Chip disable to high-Z output
OE disable to high-Z output
Output hold from address change
LB, UB valid to data output
UB, LB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
Parameter List
(Test Load and Test Input/Output Reference)
L
=100pF+1TTL
C
L
Symbol
=50pF+1TTL
t
t
V
I
RDR
SDR
A
DR
DR
=0 to 70 C, Industrial Product: T
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Symbol
t
t
Test Condition
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
t
t
OHZ
t
t
t
t
OLZ
BLZ
BHZ
WC
CW
WR
DW
OW
RC
CO
OE
OH
AW
WP
DH
BW
AA
HZ
BA
AS
LZ
A
=-40 to 85 C, Automotive Product : T
5
Min
55
10
10
55
45
45
45
25
45
K6X4016C3F-B
K6X4016C3F-Q
K6X4016C3F-F
5
5
0
0
0
0
0
0
0
5
-
-
-
-
55ns
1. Including scope and jig capacitance
Max
55
55
25
20
20
25
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
Speed Bins
L
1)
Min
2.0
0
5
Min
70
10
10
70
60
60
55
30
60
A=
5
5
0
0
0
0
0
0
0
5
-
-
-
-
-40 to 125 C, )
70ns
Typ
CMOS SRAM
-
-
-
-
Max
70
70
35
25
25
35
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
September 2003
Max
5.5
12
12
25
-
-
Revision 1.0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A

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