K6X4016T3F-F SAMSUNG [Samsung semiconductor], K6X4016T3F-F Datasheet - Page 2

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K6X4016T3F-F

Manufacturer Part Number
K6X4016T3F-F
Description
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
PRODUCT FAMILY
1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V).
2. The parameter is measured with 30pF test load.
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
PIN DESCRIPTION
K6X4016T3F Family
I/O
Process Technology: Full CMOS
Organization: 256K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F
Product Family
K6X4016T3F-Q
A
K6X4016T3F-B
K6X4016T3F-F
Name
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
1
WE
OE
CS
~A
~I/O
17
16
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Input/Output
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
A17
A16
A15
A14
A13
I/OI
Vcc
Vss
WE
CS
A4
A3
A2
A1
A0
Operating Temperature Vcc Range
10
11
12
13
14
15
16
17
18
19
20
21
22
Automotive(-40~125 C)
1
2
3
4
5
6
7
8
9
Commercial(0~70 C)
Industrial(-40~85 C)
44-TSOP2
Forward
Name Function
Vcc
Vss
UB
NC
LB
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Power
Ground
Lower Byte (I/O
Upper Byte (I/O
No Connection
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
2.7~3.6V
1~8
9~16
)
)
55
Speed(ns)
70
1)
/70
GENERAL DESCRIPTION
advanced CMOS process technology. The families support var-
ious operating temperature range and have 44-TSOP2 pack-
age type for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FUNCTIONAL BLOCK DIAGRAM
2)
2
I/O
The K6X4016T3F families are fabricated by SAMSUNG s
/85ns
2)
9
~I/O
WE
OE
UB
LB
CS
/85ns
I/O
16
Row
Addresses
1
~I/O
Control
logic
8
(I
Standby
SB1
10 A
10 A
20 A
Power Dissipation
, Max)
Clk gen.
Data
cont
Data
cont
Data
cont
Row
select
(I
Operating
CC2
25mA
, Max)
Precharge circuit.
CMOS SRAM
Column Addresses
Memory array
Column select
I/O Circuit
44-TSOP2-400F
PKG Type
August 2003
Revision 1.0
Vcc
Vss

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