RFW2N06RLE INTERSIL [Intersil Corporation], RFW2N06RLE Datasheet

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RFW2N06RLE

Manufacturer Part Number
RFW2N06RLE
Description
2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFW2N06RLE
Manufacturer:
Intersil/FSC
Quantity:
12 500
2A, 60V, 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Ordering Information
NOTE: When ordering, use the entire part number.
Packaging
RFW2N06RLE
PART NUMBER
HEXDIP
PACKAGE
6-283
Data Sheet
RFW2N06RLE
BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
GATE
4 PIN HEXDIP
SOURCE
http://www.intersil.com or 407-727-9207
Features
• 2A, 60V
• r
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
Symbol
Circuits
- TB334 “Guidelines for Soldering Surface Mount
DS
Components to PC Boards”
DRAIN
(on) = 0.160
July 1999
G
|
Copyright
RFW2N06RLE
D
File Number 2838.3
S
©
Intersil Corporation 1999

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RFW2N06RLE Summary of contents

Page 1

... This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors ...

Page 2

... 1MHz ISS DS GS (Figure 11) C OSS C RSS R JA SYMBOL TEST CONDITIONS 2A, dl /dt = 100A 2%. RFW2N06RLE DGR 1.09 D 0.009 Refer to UIS Curve -55 to 150 J, STG 300 L 260 pkg MIN TYP ...

Page 3

... FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 15 5V PULSE DURATION = 250 s 10V 4V DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 5. SATURATION CHARACTERISTICS 6-285 RFW2N06RLE Unless Otherwise Specified 2.5 2.0 1.5 1.0 0.5 0 100 125 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT MAX RATED ...

Page 4

... FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1500 1200 900 C ISS 600 C OSS 300 C RSS DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 6-286 RFW2N06RLE Unless Otherwise Specified (Continued) 2.5 2.0 1.5 1.0 0.5 6.0 6.5 7.0 FIGURE 8. NORMALIZED DRAIN TO SOURCE ON 1.50 1.25 1.00 0.75 0.50 100 150 o C) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN 60 ...

Page 5

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 6-287 RFW2N06RLE ...

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