H5PS1G63EFR HYNIX [Hynix Semiconductor], H5PS1G63EFR Datasheet - Page 18

• Manufacturer Part Number: H5PS1G63EFR
• Description: 1Gb DDR2 SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 0.4 / Nov 2008
Note :
1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed
2. IDD specifications are tested after the device is properly initialized
3. Input slew rate is specified by AC Parametric Test Condition
4. IDD parameters are specified with ODT disabled.
5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met
6. For DDR2-667/800 testing, tCK in the COnditions should be interpreted as tCK (avg).
7.
grade)
with all combinations of EMR bits 10 and 11.
Definitions for IDD
LOW is defined as Vin ≤ VILAC (max)
HIGH is defined as Vin ≥ VIHAC (min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks)
for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per
clock) for DQ signals not including masks or strobes.
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
18