STF20NM60A STMICROELECTRONICS [STMicroelectronics], STF20NM60A Datasheet - Page 3

• Manufacturer Part Number: STF20NM60A
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) C
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
Symbol
oss eq.
Symbol
Symbol
Symbol
I
V
g
SDM
oss eq.
C
C
t
t
C
fs
SD
d(on)
Q
Q
d(off)
I
I
I
2. Pulse width limited by safe operating area.
Q
Q
Q
oss
rrm
rrm
SD
t
t
rss
iss
t
t
rr
rr
(1)
gs
gd
r
f
g
rr
rr
(1)
(2)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
V
I
V
D
V
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
DS
GS
SD
SD
SD
DS
DD
DD
GS
DD
DD
DD
G
G
= 10A
= 4.7
= 4.7
= 20 A, V
= 20 A, di/dt = 100A/µs,
= 20 A, di/dt = 100A/µs,
> I
= 0V, V
= 25V, f = 1 MHz, V
= 300V, I
= 400V, I
= 10V
= 300V, I
= 50 V, T
= 50 V, T
D(on)
Test Conditions
Test Conditions
Test Conditions
Test Conditions
STB20NM60A-1/STP20NM60A/STF20NM60A
V
DS
x R
V
GS
GS
GS
D
D
D
j
j
= 0V to 400V
DS(on)max,
= 25°C
= 150°C
= 10 A
= 20A,
= 20 A,
= 10V
= 10V
= 0
GS
= 0
oss
Min.
Min.
Min.
Min.
when V
DS
Typ.
Typ.
Typ.
23.6
24.8
432
595
increases from 0 to 80% V
8.2
5.1
7.3
20
16
45
19
46
20
1630
Typ.
350
150
33
11
Max.
Max.
Max.
1.5
60
20
80
Max.
Unit
Unit
Unit
nC
nC
nC
µC
µC
Unit
ns
ns
ns
ns
ns
ns
A
A
V
A
A
pF
pF
pF
pF
S
3/12
DSS
.