PD55003-E-E STMICROELECTRONICS [STMicroelectronics], PD55003-E-E Datasheet

PD55003-E-E

Manufacturer Part Number

PD55003-E-E

Description

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Manufacturer

STMICROELECTRONICS [STMicroelectronics]

Datasheet

1.PD55003-E-E.pdf (29 pages)

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Features

■

Description

The PD55003-E is a common source N-channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies of up to 1 GHz. PD55003 boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD55003’s superior linearity performance makes

it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Table 1.

May 2010

Excellent thermal stability

Common source configuration

New RF plastic package

OUT

= 3 W with 17dB gain @ 500 MHz / 12.5 V

PD55003STR-E

PD55003S-E-E

PD55003TR-E

PD55003-E-E

Order code

Device summary

N-channel enhancement-mode, lateral MOSFETs

RF POWER transistor, LdmoST plastic family

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

Doc ID 12273 Rev 3

Package

Figure 1.

Gate

Pin connection

PowerSO-10RF

(straight lead)

(formed lead)

PD55003S-E

Tape and reel

PD55003-E

Packing

Tube

Source

Drain

www.st.com

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