QM100 MITSUBISHI [Mitsubishi Electric Semiconductor], QM100 Datasheet
QM100
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QM100 Summary of contents
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... DC current gain............................... 75 FE • Insulated Type • UL Recognized Yellow Card No. E80276 ( 23.5 5 Tab#110, t=0.5 QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE File No. E80271 Dimensions Feb.1999 ...
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... CE V =300V, I =100A, I =–I = Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 100 100 620 6 1000 –40~+150 –40~+125 2500 1 ...
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... =200A =100A =50A (A) B MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 COLLECTOR-EMITTER REVERSE VOLTAGE QM100CY-H INSULATED TYPE I =–2A B2 –5A 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...
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... =–I = =25° =125° FORWARD CURRENT QM100CY-H INSULATED TYPE – (A) F Feb.1999 ...