BGA416_08 INFINEON [Infineon Technologies AG], BGA416_08 Datasheet
BGA416_08
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BGA416_08 Summary of contents
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Edition 2008-04-21 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2008. © All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms ...
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BGA416, RF Cascode Amplifier Revision History: 2008-04-21, Rev. 2.1 Previous Version: 2005-07-26 Page Subjects (major changes since last revision) All Document layout change 4-5 Electrical Characteristics slightly changed 7-8 Figures updated Trademarks ® SIEGET is a registered trademark of Infineon ...
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RF Cascode Amplifier Feature G • 900 MHz MA • Ultra high reverse isolation 900 MHz F • Low noise figure 900 MHz 50 • On chip bias ...
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Maximum Ratings Table 1 Maximum ratings Parameter Voltage at pin RFout 1) Device current Current into pin RFin Input power T Total power dissipation, < 123°C S Junction temperature Ambient temperature range Storage temperature range 1) Device current is equal ...
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Out Figure 2 Test Circuit for Electrical Characteristics Data Sheet GND RFin Bias-T RFout GND Top View BGA416_S_Parameter_Circuit.vsd 6 Electrical Characteristics In Bias-T N.C. Rev. 2.1, 2008-04-21 BGA416 ...
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Measured Parameters 2 Power Gain | f( 3V 5.5mA ...
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Device Current Package Information 0.2 +0.1 0.8 -0.05 Figure 3 Package Outline SOT143 Figure ...