UPA805T-T1 NEC [NEC], UPA805T-T1 Datasheet

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UPA805T-T1

Manufacturer Part Number
UPA805T-T1
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
Manufacturer
NEC [NEC]
Datasheet
1.UPA805T-T1.pdf (6 pages)
Document No. ID-3639
Date Published April 1995 P
Printed in Japan
(O.D. No. ID-9146)
FEATURES
• Low Noise, High Gain
• Operable at Low Voltage
• Small Feed-back Capacitance
• Built-in 2 Transistors (2
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
Note 110 mW must not be exceeded in 1 element.
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PA805T-T1
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PA805T
re
= 0.3 pF TYP.
PARAMETER
Sales Representative. (Unit sample quantity is 50 pcs.)
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The information in this document is subject to change without notice.
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
PRELIMINARY DATA SHEET
2SC4958)
SYMBOL
V
V
V
T
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
P
T
CBO
CEO
EBO
I
stg
C
T
j
A
60 in 1 element
120 in 2 elements
= 25 C)
PACKING STYLE
–65 to +150
RATING
150
10
9
6
2
Note
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PACKAGE DRAWINGS
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PA805T
Q
6
1
1
1.25±0.1
2.1±0.1
5
2
©
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
(Unit: mm)
4
Q
3
2
1995

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UPA805T-T1 Summary of contents

Page 1

PRELIMINARY DATA SHEET MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance C = 0.3 pF TYP. re • Built-in ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Collector Cutoff Current I CBO Emitter Cutoff Current I EBO DC Current Gain h FE Gain Bandwidth Product f T Feed-back Capacitance Insertion Power Gain | Noise Figure NF h ...

Page 3

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current I (mA) C NOISE FIGURE vs. ...

Page 4

S-PARAMETERS mA S11 GHz MAG ANG 0.200 0.9410 –9.3 0.200 0.9280 –17.7 0.600 0.8670 –26.0 0.800 0.8150 –33.6 1.000 0.7280 –41.5 1.200 0.6700 –47.3 1.400 0.5970 ...

Page 5

PA805T 5 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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