UPA809T-T1 NEC [NEC], UPA809T-T1 Datasheet

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PRELIMINARY DATA SHEET MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP ...

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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Collector Cutoff Current I CBO Emitter Cutoff Current I EBO DC Current Gain h FE Gain Bandwidth Product ( Gain Bandwidth Product ( Feed-back Capacitance Insertion Power Gain ...

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TYPICAL CHARACTERISTICS (T A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 200 100 0 50 100 Ambient Temperature T (°C) A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 200 A 180 A 160 A 20 140 A 120 ...

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NOISE FIGURE vs. COLLECTOR CURRENT GHz GHz Collector Current l (mA) C MAXIMUM AVAILABLE GAIN / INSERTION POWER GAIN vs. FREQUENCY 30 MAG ...

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S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.00 0.952 –18.2 200.00 0.913 –37.9 300.00 0.871 –55.6 400.00 0.817 –68.8 500.00 0.737 –82.6 600.00 0.657 –93.4 700.00 0.624 ...

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mA FREQUENCY S11 MHz MAG ANG 100.00 0.736 –44.1 200.00 0.603 –77.3 300.00 0.494 –100.6 400.00 0.415 –117.8 500.00 0.369 –133.0 600.00 0.350 –145.9 700.00 0.336 –155.9 ...

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mA FREQUENCY S11 MHz MAG ANG 100.00 0.924 –23.0 200.00 0.830 –46.1 300.00 0.750 –65.0 400.00 0.653 –79.4 500.00 0.548 –93.1 600.00 0.471 –104.2 700.00 0.433 –116.2 ...

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mA FREQUENCY S11 MHz MAG ANG 100.00 0.775 –34.3 200.00 0.609 –63.8 300.00 0.488 –83.7 400.00 0.390 –98.0 500.00 0.321 –111.7 600.00 0.277 –124.8 700.00 0.253 –136.0 ...

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PA809T 9 ...

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