UPA809T_99 NEC [NEC], UPA809T_99 Datasheet
UPA809T_99
Manufacturer Part Number
UPA809T_99
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
NEC [NEC]
Datasheet
1.UPA809T_99.pdf
(5 pages)
FEATURES
• SMALL PACKAGE STYLE:
• LOW NOISE FIGURE:
• HIGH GAIN BANDWIDTH: f
• HIGH COLLECTOR CURRENT: 100 mA
The UPA809T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
various hand-held wireless applications.
ELECTRICAL CHARACTERISTICS
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
Notes: 1. Pulsed measurement, pulse width
T
SYMBOLS
SYMBOLS
h
, low voltage bias and small size make this device suited for
in permanent damage.
FE1
|S
2 NE688 Die in a 2 mm x 1.25 mm package
NF = 1.5 dB TYP at 2 GHz
Cre
I
I
h
V
V
V
T
CBO
EBO
NF
21E
FE 1
PT
f
CBO
CEO
EBO
T
STG
I
/h
T
C
J
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA809T-T1, 3K per reel.
2
FE2
|
2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
h
FE
Ratio:
PARAMETERS
1 Die
2 Die
PARAMETERS AND CONDITIONS
h
h
FE1
FE2
PACKAGE OUTLINE
= Smaller Value of Q
= Larger Value of Q
CE
PART NUMBER
= 3 V, I
T
CE
= 9 GHz
= 3 V, I
CE
EB
CE
CB
C
CB
= 3 V, I
UNITS
= 7 mA, f = 2 GHz
FREQUENCY TRANSISTOR
= 1 V, I
= 1 V, I
mW
mW
= 1 V, I
C
mA
= 5V, I
350 s, duty cycle
V
V
V
C
C
= 20 mA, f = 2 GHz
1
C
C
C
1
or Q
1
=20 mA, f = 2 GHz
, or Q
E
E
= 0
= 3 mA
(T
-65 to +150
= 0
= 0, f = 1 MHz
RATINGS
(T
A
2
A
= 25 C)
2
100
110
200
150
= 25 C)
9
6
2
NPN SILICON HIGH
2 %.
UNITS
GHz
dB
dB
pF
OUTLINE DIMENSIONS
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
2.0
A
A
0.9
0.2
0.1
1.3
0.7
0.65
California Eastern Laboratories
MIN
0.85
80
PACKAGE OUTLINE S06
3
2
1
(Top View)
2.1
1.25
0 ~ 0.1
UPA809T
TYP
0.75
S06
110
0.1
9.0
6.5
1.5
0.1
(Units in mm)
UPA809T
6
5
4
0.2 (All Leads)
0.15
MAX
0.85
160
0.1
0.1
+0.10
- 0.05
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UPA809T_99 Summary of contents
Page 1
FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die 1.25 mm package • LOW NOISE FIGURE 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH GHz T • HIGH COLLECTOR ...
Page 2
UPA809T TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 0 50 100 Ambient Temperature, T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector to Emitter Voltage, V GAIN BANDWIDTH ...
Page 3
TYPICAL PERFORMANCE CURVES NOISE FIGURE vs. COLLECTOR CURRENT GHz GHz Collector Current, l (mA) C MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY 30 MAG ...
Page 4
BJT NONLINEAR MODEL PARAMETERS Parameters Q1, Q2 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR 3.5 ITF IKR 0.06 ...
Page 5
NONLINEAR MODEL SCHEMATIC LC Pin_1 0.05 nH C_C1E1 0. Pin_2 0. Pin_3 0.05 nH EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) ...