2SC1623L4

Manufacturer Part Number2SC1623L4
DescriptionNPN Silicon Epitaxial Transistors
ManufacturerMCC [Micro Commercial Components]
2SC1623L4 datasheet
 
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M C C
Features
High DC Current Gain: h
=200 TYP.(V
FE
High voltage: V
=50V
CEO
Maximum Ratings
Symbol
Rating
V
Collector-Emitter Voltage
CEO
V
Collector-Base Voltage
CBO
V
Emitter-Base Voltage
EBO
I
Collector Current
C
P
Collector power dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics @ 25
Symbol
Parameter
OFF CHARACTERISTICS
I
Collector Cutoff Current
CBO
(V
=60Vdc,I
=0)
CB
E
I
Emitter Cutoff Current
EBO
(V
=5.0Vdc, I
=0)
EB
C
ON CHARACTERISTICS
h
DC Current Gain*
F
(I
=1.0mAdc, V
=6.0Vdc)
C
CE
V
Collector Saturation Voltage*
CE(sat)
(I
=100mAdc, I
=10mAdc)
C
B
V
Base Saturation Voltage*
BE(SAT)
(I
=100mAdc,I
=10mAdc)
C
B
V
Base Emitter Voltage*
BE
(V
=6.0Vdc, I
=1.0mAdc)
CE
C
Coll e ctor Capacitance
C
ob
(V
=6.0Vdc, I
=0, f=1.0MHz)
CB
E
Gain Bandwidth product
f
T
(V
=6.0Vdc, I
=10mAdc)
CE
E
h
CLASSIFICATION
FE
Marking
L4
h
90-180
135-270
FE
* Pulse Test PW<350us, duty cycle<2%
www.mccsemi.com
Revision: 2
  omponents
20736 Marilla Street Chatsworth

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=6.0V, I
=1.0mA)
CE
C
Rating
Unit
50
V
60
V
5.0
V
100
mA
200
mW
O
-55 to +150
C
O
-55 to +150
C
C Unless Otherwise Specified
O
Min
Typ
Max
Units
---
---
0.1
uAdc
---
---
0.1
uAdc
90
200
600
---
0.15
0.3
---
0.86
1.0
0.55
0.62
0.65
---
3.0
---
---
250
---
L5
L6
L7
200-400
300-600
2SC1623
NPN Silicon
Epitaxial Transistors
SOT-23
A
D
B
C
F
E
H
G
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
.110
.120
2.80
B
.083
.098
2.10
---
C
.047
.055
1.20
D
.035
.041
.89
E
.070
.081
1.78
Vdc
F
.018
.024
.45
G
.0005
.0039
.013
H
.035
.044
.89
Vdc
J
.003
.007
.085
K
.015
.020
.37
Vdc
Suggested Solder
Pad Layout
pF
.031
.800
MHz
.035
.900
.037
.950
.037
.950
J
MAX
NOTE
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
.079
inches
2.000
mm
2003/04/30