IPB100N06S3-03_07 INFINEON [Infineon Technologies AG], IPB100N06S3-03_07 Datasheet

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IPB100N06S3-03_07

Manufacturer Part Number
IPB100N06S3-03_07
Description
OptiMOS-T2 Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N06S3-03
IPI100N06S3-03
IPP100N06S3-03
®
-T2 Power-Transistor
2)
3)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3PN0603
3PN0603
3PN0603
stg
PG-TO263-3-2
T
T
V
T
I
T
D
C
C
C
C
GS
=50 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPI100N06S3-03, IPP100N06S3-03
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
2390
100
100
400
100
±20
300
IPB100N06S3-03
PG-TO220-3-1
100
3.0
55
2007-11-07
Unit
A
mJ
A
V
W
°C
V
m
A

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IPB100N06S3-03_07 Summary of contents

Page 1

... =25 °C D,pulse = =25 °C tot stg page 1 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 2390 100 ±20 300 -55 ... +175 55/175/ 3.0 m 100 A Unit A mJ ...

Page 2

... GS I DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Values min. typ. max 0 2.1 3 100 = 100 - 2 ...

Page 3

... V =27 /dt =100 A/µ 0.5 K/W the chip is able to carry 223 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Values min. typ. max. - 21620 = 3290 - 3140 - ...

Page 4

... Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - ...

Page 5

... 5 4 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 5 -55 °C 25 °C 175 ° [V] page 5 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3- ° 5 [ -60 - 100 T [°C] ...

Page 6

... Typ. avalanche characteristics parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3- MHz GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25° ...

Page 7

... Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 300 400 500 [nC] page 7 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3- -60 - 100 T [° 140 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100N06S3-03, IPP100N06S3-03 page 8 IPB100N06S3-03 2007-11-07 ...

Page 9

... IPB100N06S3-03 Changes Removal of ordering code Update of Infineon Logo Implementation of avalanche current single pulse Removal of ESD class Update of Infineon address Removal of foot note 3, avalanche diagrams Update Qrr and trr typ Update of disclaimer ...

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