HGTG30N60B3D_04 FAIRCHILD [Fairchild Semiconductor], HGTG30N60B3D_04 Datasheet

HGTG30N60B3D_04

Manufacturer Part Number

HGTG30N60B3D_04

Description

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Manufacturer

FAIRCHILD [Fairchild Semiconductor]

Datasheet

1.HGTG30N60B3D_04.pdf (8 pages)

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60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25

development type TA49170. The diode used in anti-parallel

with the IGBT is the development type TA49053.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49172.

Ordering Information

NOTE: When ordering, use the entire part number.

Features

• 60A, 600V, T

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

HGTG30N60B3D

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

PART NUMBER

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

= 25

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

TO-247

C and 150

PACKAGE

C. The IGBT used is the

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

Data Sheet

G30N60B3D

BRAND

= 150

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

Packaging

Symbol

April 2004

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

JEDEC STYLE TO-247

HGTG30N60B3D

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

HGTG30N60B3D Rev. B2

4,587,713

4,644,637

4,801,986

4,883,767

Related parts for HGTG30N60B3D_04

HGTG30N60B3D_04 Summary of contents

Page 1

Data Sheet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a ...

Page 2

Absolute Maximum Ratings T C Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance Junction To Case NOTE: ...

Page 4

Typical Performance Curves T = 150 J 100 0. MAX1 d(OFF)I d(ON MAX2 OFF P = CONDUCTION ...

Page 5

Typical Performance Curves 1mH 480V ...

Page 6

Typical Performance Curves FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 0 10 0.50 0.20 0. 0.05 0.02 0. SINGLE PULSE - FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 200 175 ...

Page 7

Test Circuit and Waveforms L = 1mH FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When ...

Page 8

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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