APT8011JLL_04 ADPOW [Advanced Power Technology], APT8011JLL_04 Datasheet
APT8011JLL_04
Manufacturer Part Number
APT8011JLL_04
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
1.APT8011JLL_04.pdf
(5 pages)
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
E
E
DS(on)
I
GS(th)
,T
I
DSS
GSS
P
I
GSM
DSS
DM
T
AR
I
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
= 25°C
1
C
= 25°C
4
GS
GS
DS
, I
2
DS
®
= ±30V, V
GS
D
= 640V, V
by significantly lowering R
= 800V, V
(V
= 5mA)
R
= 0V, I
GS
MOSFET
= 10V, 25.5A)
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
All Ratings: T
C
= 125°C)
DS(ON)
C
800V 51A 0.110
= 25°C unless otherwise specified.
APT8011JLL
MIN
800
3
APT8011JLL
-55 to 150
3600
5.56
TYP
±30
±40
800
204
694
300
51
51
50
ISOTOP
0.110
±100
MAX
100
500
®
5
G
"UL Recognized"
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT8011JLL_04 Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
Typical Performance Curves RC MODEL Junction temp. (°C) 0.0375 Power (watts) 0.142 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 V DS > (ON (ON)MAX. 250µSEC. PULSE TEST 120 @ <0.5 % DUTY ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 51A ...
Page 5
Typical Performance Curves 10% t d(on Drain Current 90% 10 DrainVoltage Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test Circuit r ...