TLP181_02 TOSHIBA [Toshiba Semiconductor], TLP181_02 Datasheet

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TLP181_02

Manufacturer Part Number
TLP181_02
Description
GaAs Ired and Photo−Transistor
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP181 is a small outline coupler,
suitable for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
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Collector−emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577,
Option (V4) type
Rank GB: 100% (min.)
VDE approved: VDE0884 satisfied
Maximum operating insulation voltage: 565V
Highest permissible over voltage: 6000V
file no. E67349
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP181
PK
PK
1
Pin Configuration
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
Weight: 0.09 g
TOSHIBA
6
4
11−4C1
2002-09-25
(top view)
TLP181
Unit in mm

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TLP181_02 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to ...

Page 2

Current Transfer Ratio Classification Type *1 (None) Rank Y TLP181 Rank GR Rank BL Rank GB *1: EX, Rank GB: TLP181 (GB) (Note) Application, type name for certification test, please use standard product type name TLP181 (GB): TLP181 ...

Page 3

Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current detating Pulse forward current (100µs pulse, 100pps) Reverse voltage Junction temperature Collector-emitter voltage Emitter-collector valtage Collector current Collector power dissipation (1 Circuit) Collector power dissipation derating (1 Circuit Ta ≥ ...

Page 4

Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector dark current Capacitance (collector to emitter) Coupled Electrical Characteristics Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage Off-state collector current Isolation Characteristics Characteristic ...

Page 5

Swiching Characteristics Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Fig. 1 Switching time test circuit I F (Ta = 25°C) Symbol Test Condition ...

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I – 100 - Ambient temperature Ta (°C) I – 3000 Pulse width ≤ 100µ 25°C 1000 500 300 100 ...

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I – 25°C 50mA 40 30mA 20mA 15mA 30 10mA P C (MAX 5mA Collector-emitter voltage – ...

Page 8

V – Ta CE(sat) 0. 1mA 0.2mA 0.20 0.16 0.12 0.08 0.04 0 -40 - Ambient temperature Ta (°C) Switching Time – 1000 Ta = 25° ...

Page 9

RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

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