28F640W30 NUMONYX [Numonyx B.V], 28F640W30 Datasheet

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28F640W30

Manufacturer Part Number
28F640W30
Description
Numonyx Wireless Flash Memory (W30)
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
Numonyx™ Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Product Features
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst-Mode and Page-Mode in All Blocks
— Burst Suspend Feature
— Enhanced Factory Programming:
— Programmable WAIT Signal Polarity
Flash Power
— V
— V
— Standby Current (130 nm) = 8 µA (typ.)
— Read Current = 7 mA
Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
— Numonyx™ Flash Data Integrator (FDI) and
Quality and Reliability
— Operating Temperature:
— 100K Minimum Erase Cycles
— 130 nm ETOX™ VIII Process
— 180 nm ETOX™ VII Process
and across All Partition Boundaries
3.5 µs per Word Program Time
(4 word burst, typical)
Latency Time
Common Flash Interface (CFI) Compatible
–40 °C to +85 °C
CC
CCQ
= 1.70 V – 1.90 V
= 2.20 V – 3.30 V
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top or Bottom Parameter Blocks
Flash Security
— 128-bit Protection Register: 64 Unique
— Absolute Write Protection with V
— Program and Erase Lockout during Power
— Individual and Instantaneous Block
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF
— 180 nm: 32Mb and 128Mb Densities in VF
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
Device Identifier Bits; 64 User OTP
Protection Register Bits
Ground
Transitions
Locking/Unlocking with Lock-Down
BGA Package; 64Mb, 128Mb in QUAD+
Package
BGA Package; 64Mb Density in µBGA*
Package
Order Number: 290702-13
Datasheet
November 2007
PP
at

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28F640W30 Summary of contents

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... Numonyx™ Wireless Flash Memory (W30) 28F640W30, 28F320W30, 28F128W30 Product Features High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — Initial Access Speed — Page-Mode Read Speed — Burst-Mode Read Speed — Burst-Mode and Page-Mode in All Blocks and across All Partition Boundaries — ...

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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR Legal L ines and D isc laim er s OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT ...

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Numonyx™ Wireless Flash Memory (W30) Contents 1.0 Introduction .............................................................................................................. 7 1.1 Document Purpose .............................................................................................. 7 1.2 Nomenclature ..................................................................................................... 7 1.3 Conventions ....................................................................................................... 8 2.0 Functional Overview .................................................................................................. 9 2.1 Overview ........................................................................................................... 9 2.2 Memory Map and Partitioning .............................................................................. 10 3.0 ...

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Read Device ID .................................................................................................55 10.3 Read Query (CFI) ..............................................................................................56 10.4 Read Status Register..........................................................................................56 10.5 Clear Status Register .........................................................................................58 11.0 Program Operations .................................................................................................59 11.1 Word Program ...................................................................................................59 11.2 Factory Programming .........................................................................................60 11.3 Enhanced Factory Program (EFP) .........................................................................61 11.3.1 EFP Requirements ...

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... Revision 09/19/00 -001 Initial release 28F3208W30 product references removed (product was discontinued) 28F640W30 product added Revised Table 2, Signal Descriptions (DQ Revised Section 3.1, Bus Operations Revised Table 5, Command Bus Definitions, Notes 1 and 2 Revised Section 4.2.2, First Latency Count (LC Setting at Code 3; added Figure 7, First Access Latency Configuration Revised Section 4 ...

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Date of Version Revision Updated Block Lock Operations (Sect. 7.1 and Fig. 11) Updated improved AC timings 11/17/03 -008 Added QUAD+ package option, and Appendix D Minor text edits including new product-naming conventions Corrected Absolute Maximum Rating for V 05/06/04 ...

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Numonyx™ Wireless Flash Memory (W30) 1.0 Introduction The Numonyx™ Wireless Flash Memory (W30) device combines state-of-the-art Numonyx™ Flash technology to provide a versatile memory solution for high performance, low power, board constraint memory applications. The W30 flash memory device offers ...

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RWE - Read-While-Erase • RWW - Read-While-Write • SCSP - Stacked Chip Scale Package • SRD - Status Register Data • VF BGA - Very-thin, Fine-pitch, Ball Grid Array • WSM - Write State Machine 1.3 Conventions The following ...

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Numonyx™ Wireless Flash Memory (W30) 2.0 Functional Overview This section provides an overview of the W30 flash memory device features and architecture. 2.1 Overview The W30 flash memory device provides Read-While-Write (RWW) and Read-White- Erase (RWE) capability. This capability provides ...

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The flash device Command User Interface (CUI) links the system processor to the internal flash memory operation. A valid command sequence written to the CUI initiates the flash device Write State Machine (WSM) operation, which automatically executes the algorithms, timings, ...

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Numonyx™ Wireless Flash Memory (W30) . Table 1: Bottom Parameter Memory Map Size Blk # (KW 100000-107FFF 0C0000-0C7FFF 32 30 0B8000-0BFFFF 32 23 080000-087FFF 32 22 078000-07FFFF 32 ...

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Table 2: Top Parameter Memory Map Size Blk # (KW 1B8000-1BFFFF 178000-17FFFF 32 40 140000-147FFF 32 39 138000-13FFFF 32 32 100000-107FFF 000000-007FFF Datasheet 12 32 Mbit ...

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Numonyx™ Wireless Flash Memory (W30) 3.0 Package Information 3.1 W30 Flash Memory Device – 130 nm Lithography Figure 1: 32 Mb, 64 Mb, and 128 Mb VF BGA Package Drawing Ball A1 Corner ...

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Figure 2: 32Mb, 64Mb and 128Mb QUAD+ Package Drawing A1 Index Mark Dimensions Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body ...

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Numonyx™ Wireless Flash Memory (W30) 3.2 W30 Flash Memory Device – 180 nm Lithography Figure 3: 64Mb Pin # 1 D Indicator Top View - Silicon backside Complete Ink M ...

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Figure 4: 32Mb VF BGA Package Drawing Ball A1 Corner Top View - Bump Side Down A1 A2 Figure 5: 128Mb VF BGA Package Drawing Ball A1 Corner ...

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Numonyx™ Wireless Flash Memory (W30) Table 4: 32Mb and 128Mb VF BGA Package Dimensions Dimension Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Width 32Mb Package Body Length32Mb Package Body Width 128Mb Package Body Length 128Mb ...

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Ballout and Signal Descriptions 4.1 Signal Ballout The W30 flash memory device is available in the 56-ball VF BGA and µBGA Chip Scale Package with 0.75 mm ball pitch, or the QUAD+ SCSP package. BGA and µBGA package ballout. ...

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Numonyx™ Wireless Flash Memory (W30) Figure 7: 88-Ball (80 Active Balls) QUAD+ Ballout R-OE# J S-CS1# K F1-CE# L VSS M DU Legend: Global ...

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Signal Descriptions • Table 5 describes the signals for the 56-ball VF BGA and µBGA Chip Scale Package. • Table 6 describes the signals for the QUAD+ package ballout. Table 5: Signal Descriptions - µBGA Package & VF BGA ...

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Numonyx™ Wireless Flash Memory (W30) Table 6: Signal Descriptions - QUAD+ Package (Sheet Symbol Type ADDRESS INPUTS: Inputs for all die addresses during read and write operations. • 128-Mbit Die : AMAX = A22 • 64-Mbit Die ...

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Table 6: Signal Descriptions - QUAD+ Package (Sheet Symbol Type RAM WRITE ENABLE: Low-true input. R-WE# controls writes to the selected RAM die. R-WE# Input R-WE# is available on stacked combinations with PSRAM or SRAM die, and ...

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Numonyx™ Wireless Flash Memory (W30) Table 6: Signal Descriptions - QUAD+ Package (Sheet Symbol Type FLASH LOGIC POWER: • F1-VCC supplies power to the core logic of flash die #1. • F2-VCC supplies power to the core ...

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Maximum Ratings and Operating Conditions 5.1 Absolute Maximum Ratings Warning: Stressing the flash device beyond the Absolute Maximum Ratings in cause permanent damage. These are stress ratings only. Notice: This datasheet contains information on products in the design phase ...

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Numonyx™ Wireless Flash Memory (W30) Table 8: Extended Temperature Operation (Sheet Symbol Parameter Main and Parameter Blocks Block Erase Main Blocks Cycles Parameter Blocks Notes: Section 6.1, “DC Current Characteristics” on page 26 1. See Characteristics” on ...

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Electrical Specifications 6.1 DC Current Characteristics Table 9: DC Current Characteristics (Sheet (1) Sym Parameter I Input Load LI Output I DQ[15:0] LO Leakage 180 nm I CCS V Standby CC 130 nm I CCS 180 ...

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Numonyx™ Wireless Flash Memory (W30) Table 9: DC Current Characteristics (Sheet (1) Sym Parameter I V Erase PPE PP Notes: 1. All currents are RMS unless noted. Typical values at typical V 2. Automatic Power Savings (APS) ...

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AC Characteristics 7.1 Read Operations - 130 nm Lithography Table 11: Read Operations - 130 nm Lithography (Sheet Sym Parameter Asynchronous Specifications R1 t Read Cycle Time AVAV R2 t Address to Output Valid AVQV ...

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Numonyx™ Wireless Flash Memory (W30) Table 11: Read Operations - 130 nm Lithography (Sheet Sym Parameter Synchronous Specifications R301 t Address Valid Setup to CLK AVCH R302 t ADV# Low Setup to CLK VLCH R303 t ...

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Table 12: Read Operations - 180 nm Lithography (Sheet Sym Parameter Latching Specifications R101 t Address Setup to ADV# High AVVH R102 t CE# Low to ADV# High ELVH R103 t ADV# Low to Output Valid ...

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Numonyx™ Wireless Flash Memory (W30) Figure 8: Asynchronous Read Operation Waveform V IH Address [ CE# [ OE# [ WE# [ High Z WAIT ...

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Figure 9: Latched Asynchronous Read Operation Waveform V IH Valid A[MAX:2] [A] Address A[1:0] [ R101 R105 V IH ADV# [ R104 V IH CE# [ R102 V IH OE# ...

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Numonyx™ Wireless Flash Memory (W30) Figure 10: Page-Mode Read Operation Waveform V IH Valid A[MAX:2] [A] Address A[1:0] [ R101 R105 V IH ADV# [ R104 V IH CE# [ ...

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Figure 11: Single Synchronous Read-Array Operation Waveform R12 Notes: Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 1. cycles during the initial access. 2. WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, or one data ...

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Numonyx™ Wireless Flash Memory (W30) Figure 12: Synchronous 4-Word Burst Read Operation Waveform Notes: Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 1. cycles during the initial access. 2. WAIT (shown asserted; RCR[10 can be configured ...

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Figure 13: WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform R12 Notes: Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 1. cycles during the initial access. 2. WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, ...

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Numonyx™ Wireless Flash Memory (W30) Figure 14: WAIT Signal in Synchronous Non-Read Array Operation Waveform R12 Notes: Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 1. cycles during the initial access. 2. WAIT shown asserted (RCR[10]=0). November 2007 ...

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Figure 15: Burst Suspend CLK R2 Address [A] R101 R105 R105 ADV# R3 CE# [E] OE# [G] R12 WAIT [T] WE# [W] R6 DATA [D/Q] Note: 1. During Burst Suspend, the Clock signal can be held high or low. 7.3 ...

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Numonyx™ Wireless Flash Memory (W30) Table 13: AC Write Characteristics (Sheet Sym W14 Write Recovery before Read WHGL EHGL W16 t WE# High to Valid Data WHQV W18 t WE# High to Address ...

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Figure 16: Write Operations Waveform V IH CLK [ Note Valid Address [A] Address V IL R101 R105 V IH ADV# [ R104 V IH CE# (WE#) [E(W ...

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Numonyx™ Wireless Flash Memory (W30) Figure 17: Asynchronous Read to Write Operation Waveform Address [A] CE# [E} OE# [G] WE# [W] Data [D/Q] RST# [P] Figure 18: Asynchronous Write to Read Operation Address [A] W2 CE# [E} WE# [W] OE# ...

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Figure 19: Synchronous Read to Write Operation R301 R302 CLK [C] R101 Address [A] R105 R105 R102 ADV# [V] R303 CE# [E] OE# [G] WE# R12 WAIT [T] Data [D/Q] Figure 20: Synchronous Write To Read Operation CLK W5 Address ...

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Numonyx™ Wireless Flash Memory (W30) 7.4 Erase and Program Times Table 14: Erase and Program Times Operation Symbol Parameter Erasing and Suspending W500 tERS/PB Erase Time W501 t ERS/MB W600 t Suspend SUSP/P Latency W601 t SUSP/E Programming W200 tPROG/W ...

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Power and Reset Specifications Product Name devices have a layered approach to power savings that can significantly reduce overall system power consumption. • The APS feature reduces power consumption when the flash device is selected but idle. • If ...

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Numonyx™ Wireless Flash Memory (W30) 8.4.1 System Reset and RST# The use of RST# during system reset is important with automated program/erase flash devices, because the system expects to read from the flash memory when it comes out of reset. ...

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Reset Specifications Table 15: Reset Specifications # Symbol P1 t RST# Low to Reset during Read PLPH RST# Low to Reset during Block Erase P2 t PLRH RST# Low to Reset during Program P3 t VCC Power Valid to ...

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Numonyx™ Wireless Flash Memory (W30) Figure 23: Transient Equivalent Testing Load Circuit Table 16 Note: See for component values. Table 16: Test Configuration Component Values for Worst Case Speed Conditions Test Configuration V Min Standard Test CCQ Note: C includes ...

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Flash Device Operations This chapter provides an overview of flash device operations. The W30 flash memory device family includes an on-chip Write State Machine (WSM) to manage block erase and program algorithms. The WSM Command User Interface (CUI) allows ...

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Numonyx™ Wireless Flash Memory (W30) Identifier codes, query data, and status register read operations execute as single- synchronous or asynchronous read cycles. WAIT is asserted during these reads. Access to the modes listed above is independent of V places the ...

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Reset The flash device enters a reset mode when RST# is asserted. In reset mode, internal circuitry is turned off and outputs are placed in a high-impedance state. After returning from reset, a time required ...

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Numonyx™ Wireless Flash Memory (W30) Table 18: Command Codes and Descriptions (Sheet Flash Device Operation Code Command FFh Read Array Read Status 70h Register 90h Read Identifier Read 98h Read Query Clear Status 50h Register Word Program ...

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Table 18: Command Codes and Descriptions (Sheet Flash Device Operation Code Command Protection Protection C0h Program Setup Configuration 60h Setup Configuration Set 03h Configuration Register Note: Do not use unassigned commands. Numonyx reserves the right to redefine ...

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Numonyx™ Wireless Flash Memory (W30) Table 19: Bus Cycle Definitions Operation Command Protection Program Protection Lock Protection Program Set Configuration Configuration Register Notes: 1. First-cycle command addresses must be the same as the target address of the operation. Examples: —The ...

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Figure 26: Interleaving a 2-Cycle Write Sequence with an Array Read Address [A] WE# [W] OE# [G] Data [Q] By contrast, a write bus cycle must not interrupt a 2-cycle write sequence. Such an interruption causes a command sequence error ...

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Numonyx™ Wireless Flash Memory (W30) 10.0 Read Operations 10.1 Read Array The Read Array command places (or resets) the partition in read-array mode and is used to read data from the flash memory array. Upon initial flash device power-up, or ...

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Table 20: Flash Device Identification Codes (Sheet Item Block Lock-Down Status Configuration Register Protection Register Lock Status Protection Register Notes: 1. The address is constructed from a base address plus an offset. For example, ...

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Numonyx™ Wireless Flash Memory (W30) Table 21: Status Register Definitions DWS ESS 7 6 Table 22: Status Register Descriptions Bit Name DWS 0 = Device WSM is Busy 7 Device WSM Status 1 = Device WSM is Ready ESS 0 ...

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Clear Status Register The Clear Status Register command clears the status register and leaves all partition output states unchanged. The WSM can set all status register bits and clear bits SR[7:6,2,0]. Because bits SR[5,4,3,1] indicate various error conditions, they ...

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Numonyx™ Wireless Flash Memory (W30) 11.0 Program Operations 11.1 Word Program When the Word Program command is issued, the WSM executes a sequence of internally timed events to program a word at the desired address, and to verify that the ...

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Figure 28: Word Program Flowchart Start Write 40h, Word Address Write Data Word Address Read Status Register 0 SR[ Full Program Status Check (if desired) Program Complete Read Status Register 1 SR[ SR[ ...

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Numonyx™ Wireless Flash Memory (W30) Figure 37, “Examples of VPP Power Supply Configurations” on page 78 of flash device power supply usage in various configurations. The 12-V V mode enhances programming performance during the short time period PP typically found ...

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Setup After receiving the EFP Setup (30h) and EFP Confirm (D0h) command sequence, SR[7] transitions from indicating that the WSM is busy with EFP algorithm startup. A delay before checking SR[7] is required to ...

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Numonyx™ Wireless Flash Memory (W30) The host programmer must reset its initial verify-word address to the same starting location supplied during the program phase. It then reissues each data word in the same order as during the program phase. Like ...

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Figure 29: Enhanced Factory Program Flowchart EFP Setup Start V = 12V PP Unlock Block Write 30h Address = WA 0 Write D0h Address = WA 0 EFP setup time Read Status Register EFP Setup Done? SR[7]=1=N Check V & ...

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Numonyx™ Wireless Flash Memory (W30) 12.0 Program and Erase Operations 12.1 Program/Erase Suspend and Resume The Program Suspend and Erase Suspend commands halt an in-progress program or erase operation. The command can be issued at any flash device address. The ...

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After resuming a suspended operation, issue the read command appropriate to the read operation. To read status after resuming a suspended operation, issue a Read Status Register command (70h) to return the suspended partition to status mode. Figure 30: Program ...

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Numonyx™ Wireless Flash Memory (W30) Figure 31: Erase Suspend / Resume Flowchart Start Write B0h Any Address Write 70h Same Partition Read Status Register SR[7] = SR[6] = Read or Read Program? Read Array Data Done? Write D0h Any Address ...

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Erase Setup command. For example, if the Erase Confirm command is given to partition B, then the selected block in partition B is erased, even if the Erase Setup command was to partition A. The 2-cycle ...

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Numonyx™ Wireless Flash Memory (W30) Figure 32: Block Erase Flowchart Start Write 20h Block Address Write D0h and Block Address Read Status Register 0 SR[ Full Erase Status Check (if desired) Block Erase Complete Read Status Register 1 ...

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However, one partition can be in erase suspend mode while a second partition is performing a program operation, and yet another partition is executing a read command. describes the command codes available for all functions. Datasheet 70 ...

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Numonyx™ Wireless Flash Memory (W30) 13.0 Security Modes The W30 flash memory device offers both hardware and software security features to protect the flash memory data. • To use the software security feature, execute the Lock Block command. • To ...

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Figure 33: Block Locking State Diagram Power-Up/Reset Notes: 1. [a,b,c] represents [WP#, D1, D0 Don’t Care. 13.1.1 Lock All blocks default to locked (state [x01]) after initial power-up or reset. Locked blocks are fully protected from alteration. Attempted ...

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Numonyx™ Wireless Flash Memory (W30) • To lock-down a locked or unlocked block, write the Lock-Down Block command sequence. • block was set to locked-down, then later changed to unlocked, issue the Lock- down command before asserting WP#, ...

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Locking operations cannot occur during program suspend. Machine” on page 86 13.1.6 Status Register Error Checking Using nested locking or program command sequences during erase suspend can introduce ambiguity into status register results. Because locking changes require 2-cycle command sequences—for ...

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Numonyx™ Wireless Flash Memory (W30) Figure 34: Locking Operations Flowchart Start Write 60h Block Address Write 01,D0,2Fh Block Address Write 90h BBA + 02h Read Block Lock Status Locking Change? Yes Write FFh Partition Address Lock Change Complete 13.2 Protection ...

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Table 26: Simultaneous Operations Allowed with the Protection Register Parameter Protection Main Partition Register Partitions Array Data See Read Write/Erase Description See Read Write/Erase Description Read Read Write/Erase No Access Write Read Allowed No Access Write/Erase Read Allowed 13.2.1 Reading ...

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Numonyx™ Wireless Flash Memory (W30) . Figure 35: Protection Register Programming Flowchart Start Write C0h Addr=Prot addr Write Protect. Register Address / Data Read Status Register No SR[ Yes Full Status Check (if desired) Program Complete Read SRD ...

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Figure 36: Protection Register Locking 13.3 VPP Protection The Product Name provides in-system program and erase at V programming, the W30 flash memory device also includes a low-cost, backward- compatible 12 V programming EFP feature can also be used to ...

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Numonyx™ Wireless Flash Memory (W30) 14.0 Set Read Configuration Register The Set Read Configuration Register (RCR) command sets the burst order, frequency configuration, burst length, and other parameters. A two-bus cycle command sequence initiates this operation. The read configuration register ...

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Table 28: Read Configuration Register Descriptions (Sheet Bit Name BW 3 Burst Wrap BL[2:0] 2-0 Burst Length Notes: 1. Undocumented combinations of bits are reserved by Numonyx for future implementations. 2. Synchronous and page read mode configurations ...

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Numonyx™ Wireless Flash Memory (W30) Figure 39: Word Boundary Word Note: The 16-word boundary is the end of the flash device sense word-line. 14.2.1 Latency Count Settings Table 29: Latency Count Settings t /t ...

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In either case, if WAIT is deasserted, then data is ready and valid. WAIT is asserted during asynchronous page mode reads. 14.4 WAIT Signal Function The WAIT signal indicates data valid when the flash device is operating in synchronous mode ...

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This equation is satisfied, and data output is available and valid at every clock period DATA is long, hold for two cycles. determined using the formula: Subsequent reads in page mode are defined by: Figure 41: Data Output ...

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Whether this delay occurs depends on the starting address. • If the starting address is aligned to a 4-word boundary, there is no delay. • If the starting address is the end of a 4-word boundary, the output delay is ...

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Numonyx™ Wireless Flash Memory (W30) 14.8 Clock Edge (RCR[6]) Configuring the valid clock edge enables a flexible memory interface to a wide range of burst CPUs. Clock configuration sets the flash device to start a burst cycle, output data, and ...

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Appendix A Write State Machine Table 31 shows the command state transitions, based on incoming commands. Only one partition can be actively programming or erasing at a time. Table 31: Next State Table (Sheet ...

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Numonyx™ Wireless Flash Memory (W30) Table 31: Next State Table (Sheet ...

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All partitions default to Read Array mode at power-up. A Read Array command issued to a busy partition results in undetermined data when a partition address is read. 4. Both cycles of two-cycle commands must be issued to the ...

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Numonyx™ Wireless Flash Memory (W30) Appendix B Common Flash Interface This appendix defines the data structure or database returned by the Common Flash Interface (CFI) Query command. System software parses this structure to gain critical information, such as block size, ...

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Table 33: Example of Query Structure Output of x16- and x8 Flash Devices Word Addressing: Offset Hex Code A — 00010h 0051 00011h 0052 00012h 0059 00013h 00014h 00015h P LO ...

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Numonyx™ Wireless Flash Memory (W30) Table 35: Block Status Register Offset Length (1) (BA+2)h 1 Block Lock Status Register BSR.0 Block lock status 0 = Unlocked 1 = Locked BSR.1 Block lock-down status 0 = Not locked down 1 = ...

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Table 37: System Interface Information Offset Length 1Bh 1 V logic supply minimum program/erase voltage CC bits 0–3 BCD 100 mV bits 4–7 BCD volts 1Ch 1 V logic supply maximum program/erase voltage CC bits 0–3 BCD 100 mV bits ...

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Numonyx™ Wireless Flash Memory (W30) B.5 Flash Device Geometry Definition Table 38: Flash Device Geometry Definition Offset Length 1 27h 28h 2 2Ah 2 2Ch 1 2Dh 4 31h 4 4 35h Address –B 27: --16 28: --01 29: --00 ...

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B.6 Numonyx-Specific Extended Query Table Table 39: Primary Vendor-Specific Extended Query (1) Length Offset P = 39h (P+0)h 3 Primary extended query table (P+1)h (P+2)h (P+3)h 1 Major version number, ASCII (P+4)h 1 Minor version number, ASCII (P+5)h 4 Optional ...

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Numonyx™ Wireless Flash Memory (W30) Table 40: Protection Register Information (1) Offset Length Description (Optional flash device features and commands 39h Number of Protection register fields in JEDEC ID space. (P+E)h 1 00h indicates that 256 protection fields ...

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Table 43: Partition Region 1 Information (1) Offset P = 39h Bottom Top (P+1A)h (P+1A)h Number of identical partitions within the partition region (P+1B)h (P+1B)h (P+1C)h (P+1C)h Number of program or erase operations allowed in a partition bits 0–3 = ...

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Numonyx™ Wireless Flash Memory (W30) Table 44: Partition Region 2 Information (1) Offset P = 39h Bottom Top (P+30)h (P+28)h Number of identical partitions within the partition region (P+31)h (P+29)h (P+32)h (P+2A)h Number of program or erase operations allowed in ...

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Table 45: Partition and Erase-Block Region Information Address 52: --02 53: --01 54: --00 55: --11 56: --00 57: --00 58: --02 59: --07 5A: --00 5B: --20 5C: --00 5D: --64 --00 5E: 5F: --01 60: --03 61: --06 ...

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... Numonyx™ Wireless Flash Memory (W30) Appendix C Ordering Information To order samples, obtain datasheets or inquire about any stack combination, please contact your local Numonyx representative. Table 46: 38F Type Stacked Components PF 38F 5070 Product Die/ Package Product Line Density Designator Designator Configuration Char 1 = Flash ...

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Table 47: 48F Type Stacked Components PC 48F 4400 Product Die/ Package Product Line Density Designator Designator Configuration PC = Char 1 = Flash Easy BGA, die #1 RoHS Char 2 = Flash RC = die #2 Easy BGA, Leaded ...

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Numonyx™ Wireless Flash Memory (W30) Table 49: NOR Flash Family Decoder Code C C3 J3v L18 / L30 M M18 P P30 / P33 W W18 / W30 0(zero) - Table 50: Voltage / NOR Flash CE# Configuration ...

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Table 51: Parameter / Mux Configuration Decoder Code, Mux Number of Flash Identificati Non Mux Mux "Full" Mux Only Flash is Muxed and RAM ...

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