TAJD106K035 FREESCALE [Freescale Semiconductor, Inc], TAJD106K035 Datasheet

TAJD106K035

Manufacturer Part Number

TAJD106K035

Description

RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.TAJD106K035.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

base station applications. It uses Freescale’s newest High Voltage (26 to 28

Volts) LDMOS IC technology and integrates a multi - stage structure. Its

wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity

performances cover all modulations for cellular applications: GSM, GSM

EDGE, TDMA, CDMA and W - CDMA.

Final Application

• Typical Single - Carrier W - CDMA Performance:

Driver Application

• Typical Single - Carrier W - CDMA Performance:

• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW

• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

• Integrated Quiescent Current Temperature Compensation

• On - Chip Current Mirror g

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

The MW4IC2230N wideband integrated circuit is designed for W - CDMA

60 mA, I

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

60 mA, I

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

with Enable/Disable Function

Select Documentation/Application Notes - AN1987.

out

Power Gain — 31 dB

Drain Efficiency — 15%

ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth

Power Gain — 31.5 dB

ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth

RD1

RG1

GS1

GS2

GS3

DS2

DS1

DQ2

= 350 mA, P

Figure 1. Functional Block Diagram

out

Reference FET for Self Biasing Application

Temperature Compensation

= 5 Watts Avg., f = 2140 MHz, Channel

= 0.4 Watts Avg., f = 2140 MHz, Channel

Quiescent Current

3 Stages I

= 28 Volts, I

DQ1

DS3

(1)

/RF

out

INTEGRATED POWER AMPLIFIERS

MW4IC2230NBR1 MW4IC2230GNBR1

Document Number: MW4IC2230N

MW4IC2230GNBR1

Note: Exposed backside flag is source

MW4IC2230NBR1

2110 - 2170 MHz, 30 W, 28 V

GND

Figure 2. Pin Connections

RF LDMOS WIDEBAND

TO - 272 WB - 16 GULL

GS1

GS2

GS3

DS2

RD1

RG1

DS1

MW4IC2230GNBR1

terminal for transistors.

CASE 1329A - 03

SINGLE W - CDMA

PLASTIC

MW4IC2230NBR1

TO - 272 WB - 16

CASE 1329 - 09

(Top View)

PLASTIC

Rev. 6, 5/2006

GND

DS3/

out

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TAJD106K035 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology and integrates a ...

Page 2

Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Channel Temperature Input Power Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine ...

Page 3

Table 5. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal 0.4 W Avg mA 400 mA, I out DQ1 DQ2 ...

Page 4

... Microstrip Z7 0.340″ x 0.090″ Microstrip PCB Taconic TLX8 - 0300, 0.030″, ε Description OUTPUT C10 C11 C12 2.55 r Part Number Manufacturer TAJD106K035 AVX 100B8R2CW ATC 100B1R8BW ATC 100B0R3BW ATC RF Device Data Freescale Semiconductor RF ...

Page 5

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. ...

Page 6

out 28 I DQ1 1−Carrier W−CDMA 27 26 2050 Figure 5. Single - Carrier W - CDMA Wideband Vdc dBm (Avg.) out ...

Page 7

P3dB = 46.3 dBm ( P1dB = 45.3 dBm ( Vdc mA 350 mA, I ...

Page 8

Z * load f = 2230 MHz f = 2050 MHz MHz 2050 2110 2140 2170 2230 load Figure 12. Series Equivalent Input and Load Impedance MW4IC2230NBR1 MW4IC2230GNBR1 8 Z ...

Page 9

RF Device Data Freescale Semiconductor NOTES MW4IC2230NBR1 MW4IC2230GNBR1 9 ...

Page 10

MW4IC2230NBR1 MW4IC2230GNBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 11 ...

Page 12

MW4IC2230NBR1 MW4IC2230GNBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 13 ...

Page 14

MW4IC2230NBR1 MW4IC2230GNBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 15 ...

Page 16

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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