MW4IC001MR4_06 FREESCALE [Freescale Semiconductor, Inc], MW4IC001MR4_06 Datasheet

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MW4IC001MR4_06

Manufacturer Part Number
MW4IC001MR4_06
Description
RF LDMOS Wideband Integrated Power Amplifier
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
1.MW4IC001MR4_06.pdf (16 pages)
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, I
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
12
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case @ 85°C
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
The MW4IC001M wideband integrated circuit is designed for use as a
Derate above 25°C
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
Test Methodology
C
= 25°C
Test Conditions
Characteristic
Rating
DQ
= 12 mA
Rating
3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Package Peak Temperature
INTEGRATED POWER AMPLIFIER
800 - 2170 MHz, 900 mW, 28 V
MW4IC001MR4
RF LDMOS WIDEBAND
CASE 466 - 03, STYLE 1
M1 (Minimum)
C2 (Minimum)
260
0 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Class
Value
Value
0.037
W - CDMA
4.58
27.3
150
Freescale Semiconductor
PLASTIC
PLD - 1.5
MW4IC001MR4
Rev. 4, 5/2006
RF Device Data
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Unit
°C
°C
W
°C

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MW4IC001MR4_06 Summary of contents

Page 1

Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF LDMOS Wideband Integrated Power Amplifier The ...

Page 2

Table 5. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Current ( Vdc Vdc Zero Gate Voltage Drain Current ( Vdc Vdc Gate - ...

Page 3

INPUT C10 Z1 1.331″ x 0.044″ Microstrip Z2 0.126″ x 0.076″ Microstrip Z3 0.065″ x 0.175″ Microstrip Z4 0.065″ x 0.195″ Microstrip Z5 0.680″ x 0.145″ Microstrip Z6, Z7 ...

Page 4

C10 MW4IC001MR4 900 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These ...

Page 5

P1dB Vdc 880 MHz 6 0 ...

Page 6

INPUT 1.018″ x 0.044″ Microstrip Z2 0.495″ x 0.296″ Microstrip Z3 0.893″ x 0.500″ Microstrip Z4 1.340″ x 0.022″ Microstrip Z5 0.912″ x 0.022″ Microstrip Z6 0.241″ x ...

Page 7

G ps 14.0 13 η 1990 MHz D 12.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ...

Page 8

INPUT 1.267″ x 0.044″ Microstrip Z2 0.058″ x 0.044″ Microstrip Z3 0.758″ x 0.256″ Microstrip Z4 1.073″ x 0.022″ Microstrip Z5 1.361″ x 0.022″ Microstrip Z6 0.205″ x ...

Page 9

TYPICAL CHARACTERISTICS - 2170 MHz 32 IRL η IMD 2110 13.8 G 13.4 ps 13.0 12.6 η 12.2 D P1dB 11.8 11.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ...

Page 10

Figure 22. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 900 MHz f =860 MHz mA 0.9 W PEP DD DQ out f Z ...

Page 11

MHz f = 2000 MHz 1920 MHz source Ω mA 0.9 W PEP DD DQ out f Z source MHz Ω ...

Page 12

RF Device Data Freescale Semiconductor NOTES MW4IC001MR4 23 ...

Page 13

MW4IC001MR4 24 NOTES RF Device Data Freescale Semiconductor ...

Page 14

RF Device Data Freescale Semiconductor NOTES MW4IC001MR4 25 ...

Page 15

ZONE V 4 É É É É É É É É É É É É É É ZONE W 1 É É É É É É É É É ...

Page 16

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 ...

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