MW4IC915GNBR1_06 FREESCALE [Freescale Semiconductor, Inc], MW4IC915GNBR1_06 Datasheet

MW4IC915GNBR1_06

Manufacturer Part Number

MW4IC915GNBR1_06

Description

RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MW4IC915GNBR1_06.pdf (20 pages)

Current page: 1 of 20
Download datasheet (687Kb)

RF Device Data

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

and GSM EDGE base station applications. It uses Freescale’s newest High

Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage

structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz.

The linearity performances cover all modulations for cellular applications: GSM,

GSM EDGE, TDMA, N - CDMA and W - CDMA.

Final Application

• Typical Performance: V

Driver Application

• Typical GSM/GSM EDGE Performances: V

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with

• On - Chip Current Mirror g

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

The MW4IC915NB/GNB wideband integrated circuit is designed for GSM

and 921 - 960 MHz)

Output Power

Enable/Disable Function

DQ2

Select Documentation/Application Notes - AN1987.

out

Power Gain — 30 dB

Power Added Efficiency — 44%

Power Gain — 31 dB

Power Added Efficiency — 19%

Spectral Regrowth @ 400 kHz Offset = - 65 dBc

Spectral Regrowth @ 600 kHz Offset = - 83 dBc

EVM — 1.5%

= 15 Watts CW, Full Frequency Band (860 - 960 MHz)

= 240 mA, P

RD1

RG1

RD2

RG2

GS1

GS2

DS1

out

Figure 1. Functional Block Diagram

= 3 Watts Avg., Full Frequency Band (869 - 894 MHz

Temperature Compensation

= 26 Volts, I

Quiescent Current

Reference FET for Self Biasing Application

DQ1

= 60 mA, I

= 26 Volts, I

DQ2

= 240 mA,

DQ1

= 60 mA,

DS2

(1)

/RF

out

INTEGRATED POWER AMPLIFIERS

Note: Exposed backside flag is source

MW4IC915GNBR1

MW4IC915NBR1 MW4IC915GNBR1

MW4IC915NBR1

GSM/GSM EDGE, N - CDMA

860 - 960 MHz, 15 W, 26 V

GND

RD2

RG2

RD1

RG1

GS1

GS2

DS1

RF LDMOS WIDEBAND

Figure 2. Pin Connections

terminal for transistors.

TO - 272 WB - 16 GULL

MW4IC915GNBR1

MW4IC915NBR1

CASE 1329A - 03

TO - 272 WB - 16

CASE 1329 - 09

PLASTIC

(Top View)

Rev. 7, 5/2006

MW4IC915N

GND

DS2

out/

Related parts for MW4IC915GNBR1_06

MW4IC915GNBR1_06 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology and integrates ...

Page 2

Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case GSM Application ( CW) out GSM EDGE Application (P = ...

Page 3

Table 5. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Reference Board) V Quiescent Current Accuracy over Temperature with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C) Gain Flatness in 40 MHz Bandwidth @ P Deviation from Linear ...

Page 4

V DS1 INPUT GS1 GS2 + 0.086″ Microstrip ...

Page 5

GS1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, ...

Page 6

C10 INPUT C11 C12 C16 R6 C13 C14 C17 Z1 0.681″ x 0.039″ Microstrip Z2 0.157″ x 0.228″ Microstrip ...

Page 7

C10 C9 C13 C11 C14 C12 C17 P1 R5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will ...

Page 8

TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM 860 Figure 7. Two - Tone Wideband Circuit Performance @ IRL ...

Page 9

TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) - CONTINUED −30_C Vdc P1dB out mA, I DQ1 31 25_C 30 29 85_C 28 860 870 880 890 900 ...

Page 10

Figure 17. Series Equivalent Input and Load Impedance MW4IC915NBR1 MW4IC915GNBR1 Ω load f = 900 MHz f = 980 MHz mA 240 mA ...

Page 11

RF Device Data Freescale Semiconductor NOTES MW4IC915NBR1 MW4IC915GNBR1 11 ...

Page 12

MW4IC915NBR1 MW4IC915GNBR1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor NOTES MW4IC915NBR1 MW4IC915GNBR1 13 ...

Page 14

MW4IC915NBR1 MW4IC915GNBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 15

RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 15 ...

Page 16

MW4IC915NBR1 MW4IC915GNBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 17 ...

Page 18

MW4IC915NBR1 MW4IC915GNBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 19 ...

Page 20

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

Related keywords

MW4IC915GNBR1_06 datasheet
MW4IC915GNBR1_06 data sheet
MW4IC915GNBR1_06 pdf datasheet
MW4IC915GNBR1_06 component
MW4IC915GNBR1_06 part
MW4IC915GNBR1_06 distributor
MW4IC915GNBR1_06 RoHS
MW4IC915GNBR1_06 datasheet download