Q67060-S6160 INFINEON [Infineon Technologies AG], Q67060-S6160 Datasheet
Q67060-S6160
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Q67060-S6160 Summary of contents
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et . ber ...
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Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Undervoltage shut down • Driver circuit with logic level inputs • Adjustable slew rates for optimized EMI Type BTS 7960B BTS 7960P Data Sheet undervoltage, Ordering Code Q67060-S6160 on request 2 BTS 7960B BTS 7960P BTS 7960B P-TO-263-7 BTS 7960P P-TO-220-7 Package ...
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Overview The BTS 7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All ...
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Terms Following figure shows the terms used in this data sheet Figure 2 Terms Data Sheet I ...
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Pin Configuration 2.1 Pin Assignment BTS 7960B P-TO-263 Figure 3 Pin Assignment BTS 7960B and BTS 7960P (top view) 2.2 Pin Definitions and Functions Pin Symbol 1 GND ...
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Maximum Ratings T -40 C < < 150 C (unless otherwise specified) j Pos Parameter Electrical Maximum Ratings 3.0.1 Supply voltage 3.0.2 Logic Input Voltage 3.0.3 HS/LS continuous drain current 3.0.4 HS pulsed drain current 3.0.5 LS pulsed drain ...
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Block Description and Characteristics 4.1 Supply Characteristics T – < < 150 < j Pos. Parameter General 4.1.1 Operating Voltage 4.1.2 Supply Current 4.1.3 Quiescent Current Data Sheet High Current PN Half Bridge Block ...
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Power Stages The power stages of the BTS 7960 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located ...
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Power Stages - Static Characteristics T – < < 150 < j Pos. Parameter High Side Switch - Static Characteristics 4.2.1 On state high side resistance 4.2.2 Leakage current high side 4.2.3 Reverse diode ...
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Switching Times dr(HS) r(HS) V OUT 90% 10% Figure 5 Definition of switching times high side ( (LS) f (LS) V OUT 90% 10% Figure 6 Definition of switching times low side ...
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Power Stages - Dynamic Characteristics T V -40 C < < 150 Pos. Parameter HIgh Side Switch Dynamic Characteristics 4.2.7 Rise-time of HS 4.2.8 Slew rate HS on 4.2.9 Switch on delay ...
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T V -40 C < < 150 Pos. Parameter Low Side Switch Dynamic Characteristics 4.2.13 Rise-time of LS 4.2.14 Slew rate LS switch off 4.2.15 Switch off delay time LS 4.2.16 Fall-time of ...
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Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used ...
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IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. t After the switches return to their initial setting. The error signal at the IS pin is reset CLS t after 2 * ...
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High Side Switch -40° 25° 150° CLH Figure 9 Typical Current Limitation Detection Levels vs. Supply Voltage ...
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Electrical Characteristics - Protection Functions T – < < 150 < j Pos. Parameter Under Voltage Shut Down 4.3.1 Switch-ON voltage 4.3.2 Switch-OFF voltage 4.3.3 ON/OFF hysteresis Over Voltage Lock Out 4.3.4 Switch-ON voltage ...
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Control and Diagnostics 4.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In ...
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Normal operation: current sense mode VS ESD- Load Sense output I logic IS(lim) Figure 10 Sense current and fault current Data Sheet High Current PN Half Bridge Block Description and Characteristics Fault condition: error flag mode ...
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Truth Table Device State Normal operation Over-voltage (OV) Under-voltage (UV) Overtemperature or short circuit of HSS or LSS Current limitation mode 1 Inputs: Switches 0 = Logic LOW OFF = switched off 1 = Logic HIGH ON = switched ...
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Electrical Characteristics - Control and Diagnostics T – < < 150 < j Pos. Parameter Control Inputs (IN and INH) 4.4.1 High level voltage INH, IN 4.4.2 Low level voltage INH, IN 4.4.3 Input ...
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Thermal Characteristics Pos Parameter 5.0.1 Thermal Resistance Junction-Case, Low Side Switch thjc(LS) j(LS) 5.0.2 Thermal Resistance Junction-Case, High Side Switch thjc(HS) j(HS) 5.0.3 Thermal Resistance Junction-Case, both Switches R T ...
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Application 6.1 Application Example Microcontroller µC Reset Vdd Vss I/O I/O I/O I/O BTS 7960B INH Figure 11 Application Example: H-Bridge with two BTS 7960B 6.2 Layout Considerations Due to the fast switching times for high ...
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Package Outlines P-TO-263-7 P-TO-263-7 (Plastic Transistor Single Outline Package) 0...0. 0 1.27 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut . ...
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Package Outlines P-TO-220-7 P-TO-220-7 (Plastic Transistor Single Outline Package) C 0...0. 0 1.27 0. Shear and punch direction no burrs this surface Back side, heatsink contour All m etal surfaces tin plated, except ...
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Revision History Revision Date n.a. 2004-03-18 0.9 2004-10-10 1.0 2004-11-30 1.1 2004-12-07 Data Sheet Changes / Comments Target Data Sheet Target Data Sheet converted to new layout Preliminary Data Sheet “Preliminary” removed; No other changes 25 High Current PN ...
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Edition 2004-12-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2004-12-07. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms ...
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Published by Infineon Technologies AG ...