BLF878_09 NXP [NXP Semiconductors], BLF878_09 Datasheet

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BLF878_09

Manufacturer Part Number
BLF878_09
Description
UHF power LDMOS transistor
Manufacturer
NXP [NXP Semiconductors]
Datasheet
1.BLF878_09.pdf (18 pages)
1. Product profile
CAUTION
1.1 General description
1.2 Features
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
Table 1.
RF performance at V
[1]
[2]
I
I
Mode of operation f
CW, class AB
2-Tone, class AB
PAL BG
DVB-T (8k OFDM)
BLF878
UHF power LDMOS transistor
Rev. 02 — 15 June 2009
2-Tone performance at 860 MHz, a drain-source voltage V
drain current I
DVB performance at 858 MHz, a drain-source voltage V
drain current I
Black video signal, sync expansion: input sync = 33 %; output sync
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
N
N
N
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Peak envelope power load power = 300 W
Power gain = 21 dB
Drain efficiency = 46 %
Third order intermodulation distortion = 35 dBc
Average output power = 75 W
Power gain = 21 dB
Drain efficiency = 32 %
Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)
Typical performance
Dq
Dq
DS
(MHz)
860
f
860 (ch69)
858
= 1.4 A:
= 1.4 A:
1
= 42 V in a common-source 860 MHz narrowband test circuit.
= 860; f
2
= 860.1 -
P
(W)
300
300 (peak sync.)
-
L
[1]
P
(W)
-
300
-
-
L(PEP)
DS
27 %.
DS
of 42 V and a quiescent
of 42 V and a quiescent
P
(W)
-
-
-
75
Product data sheet
L(AV)
G
(dB) (%) (dBc)
21
21
21
21
p
60
46
45
32
D
IMD3
-
-
35
32
[2]

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BLF878_09 Summary of contents

Page 1

BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the ...

Page 2

NXP Semiconductors I Integrated ESD protection I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I High efficiency I Designed for broadband operation (470 MHz to 860 MHz) I Excellent reliability I ...

Page 3

NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) R th(c-h) [1] R th(j-c) [2] ...

Page 4

NXP Semiconductors Fig 1. 7. Application information Table unless otherwise specified. case Mode of operation 2-Tone, class AB DVB-T (8k OFDM) [ 1.4 A for total device. Dq [2] Measured [dBc] with delta ...

Page 5

NXP Semiconductors 7.1 Narrowband RF figures 7.1.1 CW (1) V (2) V Fig 2. BLF878_2 Product data sheet (dB 100 I = 1.4 A; measured in a common source ...

Page 6

NXP Semiconductors 7.1.2 2-Tone (dB 100 200 I = 1.4 A; measured in a common source narrowband Dq 860 MHz test circuit. ( ...

Page 7

NXP Semiconductors 7.1.3 DVB (2) (dB) ( (1) ( 100 150 I = 1.4 A; measured in a common source narrowband Dq 860 MHz test circuit. ( ...

Page 8

NXP Semiconductors 7.2 Broadband RF figures 7.2.1 2-Tone (dB 400 500 600 700 P = 150 1.4 A; measured in a common L(AV) Dq source broadband test circuit ...

Page 9

NXP Semiconductors 7.2.2 DVB (dB 400 500 600 700 1.4 A; measured in a common L(AV) Dq source broadband test circuit as described in (1) ...

Page 10

NXP Semiconductors 7.3 Ruggedness in class-AB operation The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. 7.4 Impedance information Fig 12. Definition of transistor ...

Page 11

NXP Semiconductors Table 8. Simulated Z f MHz 925 950 975 1000 7.5 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 13. BLF878 ...

Page 12

NXP Semiconductors 8. Test information Table 9. List of components For test circuit, see Figure 14, Figure 15 Component Description B1, B2 semi rigid coax C1, C2 multilayer ceramic chip capacitor C3, C9 multilayer ceramic chip capacitor C4 multilayer ceramic ...

Page 13

NXP Semiconductors + V G1(test C30 C28 R1 C26 C24 50 C25 L22 B2 L23 C27 R2 C29 C31 G2(test) See Table 9 for a list of components. Fig 14. Class-AB common-source ...

Page 14

NXP Semiconductors +V G1(test) R7 C28 R3 R5 C30 R1 C26 C25 C27 R2 C31 C29 R8 +V G2(test) See Table 9 for a list of components. Fig 16. Component layout for class-AB common source amplifier BLF878_2 ...

Page 15

NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads Dimensions (1) Unit max 5.77 11.81 0.15 31.55 mm nom min 4.80 11.56 0.10 30.94 max ...

Page 16

NXP Semiconductors 10. Abbreviations Table 10. Acronym CW CCDF DVB DVB-T ESD IMD3 LDMOS LDMOST OFDM PAL PAR PEP RF TTF UHF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF878_2 20090615 • Modifications: Table 4 ...

Page 17

NXP Semiconductors 12. Legal information 12.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 18

NXP Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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