BSP315PL6327HTSA1 Infineon, BSP315PL6327HTSA1 Datasheet

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BSP315PL6327HTSA1

Manufacturer Part Number

BSP315PL6327HTSA1

Description

Mosfet p-Ch 60v 1.17a Sot-223

Manufacturer

Infineon

Datasheet

1.BSP315PL6327HTSA1.pdf (9 pages)

Current page: 1 of 9
Download datasheet (427Kb)

Type

BSP315P

SIPMOS

Features

Maximum Ratings,at T

Parameter

Continuous drain current

T

T

Pulsed drain current

T

Avalanche energy, single pulse

I

Avalanche energy, periodic limited by T

Reverse diode d v /d t

I

T

Gate source voltage

Power dissipation

T

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

• Qualified according to AEC Q101

ESD Class; JESD22-A114-HBM

D

S

Rev.1.6

Enhancement mode

A

A

A

jmax

A

P-Channel

Avalanche rated

Logic Level

d v /d t rated

= -1.17 A, V

= -1.17 A , V

= 25 °C

= 70 °C

= 25 °C

= 25 °C

= 150 °C

Package

PG-SOT223

Small-Signal-Transistor

DS

DD

= -48 V, d i /d t = 200 A/µs,

= -25 V, R

j

= 25 °C, unless otherwise specified

GS

Tape and Reel Information

L6327: 1000 pcs/reel

= 25

Product Summary

Drain source voltage

Drain-Source on-state resistance R

Continuous drain current

jmax

Pin 1

Page 1

G

Symbol

I

I

E

E

d v /d t

V

P

T

D

D puls

Pin2/4

j ,

AS

AR

GS

tot

T

D

stg

PIN 3

Marking

BSP315P

S

-55...+150

55/150/56

V

I

Value

-1.17

-0.94

-4.68

D

Class 0

0.18

DS

DS(on)

1.8

24

6

20

4

Packaging

Non dry

BSP315P

-1.17

2012-03-29

-60

0.8

1

Unit

A

mJ

kV/µs

V

W

°C

2

VPS05163

V

A

3

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