BSP317PE6327NT Infineon, BSP317PE6327NT Datasheet
BSP317PE6327NT
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BSP317PE6327NT Summary of contents
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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Type Package BSP 317 P SOT-223 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot BSP 317 P 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...
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Typ. output characteristic parameter =25° 1.6 10V 5V A 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 2.2V 1 0.8 0.6 0.4 0 0.5 1 1.5 2 2.5 ...
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Drain-source on-state resistance DS(on) j parameter : I = -0. BSP 317 98% 4 typ -60 - ...
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Typ. gate charge Gate parameter -0.43 A pulsed BSP 317 P -16 V -12 - 20% -4 50 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...