BTS117E3045ANT Infineon, BTS117E3045ANT Datasheet

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BTS117E3045ANT

Manufacturer Part Number
BTS117E3045ANT
Description
Manufacturer
Infineon
Datasheet
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip tech-
nology. Fully protected by embedded protected functions.
Current limitation
linear applications
1
IN
E S D
pro te ctio n
O v erloa d
lim ita tio n
dv /d t
te m pe rature
p ro te ctio n
lim ita tio n
C u rre n t
O ve r-
O ve rvoltag e
S h ort circ uit
p rotection
S ho rt c ircu it
Page 1
p rotection
p ro te ctio n
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
H IT F E T
S o u rce
D rain
L O A D
3
2
V bb
+
HITFET
V
R
I
I
E
D(lim)
D(ISO)
DS
AS
DS(on)
    = = = =
BTS 117
19.05.2000
1000 mJ
100 mΩ
3.5
60
M
7
V
A
A

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BTS117E3045ANT Summary of contents

Page 1

Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection Current limitation • • Status feedback with external input resistor • Analog driving ...

Page 2

Maximum Ratings °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ V ≤ 10V IN V < -0. > 10V IN IN ...

Page 3

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150° Off state drain current -40...+150 °C, V ...

Page 4

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Initial peak short circuit current limit Current limit ...

Page 5

Block Diagramm Terms HITFET Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current > >10V. IN Inductive and ...

Page 6

Maximum allowable power dissipation P = f(T ) tot c BTS 117 On-state resistance 3.5A; V =5V ...

Page 7

Typ. transfer characteristics =12V; T =25° Transient thermal impedance thJC p parameter : D = ...

Page 8

Application examples: Status signal of thermal shutdown by monitoring input current HITFET µC µ ∆ IN( ∆ V thermal shutdown Page 8 BTS 117 19.05.2000 ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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