BSS159NL6327HTSA1 Infineon, BSS159NL6327HTSA1 Datasheet

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BSS159NL6327HTSA1

Manufacturer Part Number
BSS159NL6327HTSA1
Description
Mosfet n-Ch 60v 230ma Sot-23
Manufacturer
Infineon
Datasheet
Rev. 1.32
1)
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS159
BSS159
see table on next page and diagram 11
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Pb-free
Yes
Yes
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in V
j
GS
tot
, T
stg
T
T
T
I
di /dt =200 A/µs,
T
T
D
page 1
A
A
A
j,max
A
=0.23 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
DSS,min
=60 V,
DS
DS(on),max
GS(th)
bands
-55 ... 150
55/150/56
SOT-23
Class 0
Value
1)
0.23
0.18
0.92
0.36
±20
6
Marking
SGs
SGs
0.13
60
BSS159N
8
Unit
A
kV/µs
V
W
°C
V
A
2006-12-11

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BSS159NL6327HTSA1 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead-plating; RoHS compliant Type Package BSS159 PG-SOT-23 BSS159 PG-SOT-23 Maximum ratings =25 °C, unless otherwise ...

Page 2

Parameter Thermal characteristics Thermal characteristics Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th ...

Page 3

Parameter Dynamic characteristics Input capacitance Dynamic characteristics Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0.6 0 0.4 0.3 0.2 0 Typ. transfer characteristics I =f |>2|I ...

Page 6

Drain-source on-state resistance R =f =0. DS(on -60 - Threshold voltage bands I =f =25 °C ...

Page 7

Forward characteristics of reverse diode I =f parameter 150 °C 0.1 0.01 0.001 0 0 Drain-source breakdown voltage V =f =250 µA BR(DSS -60 -20 ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 1.32 Packaging: page 8 BSS159N 2006-12-11 ...

Page 9

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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