BSS84PH6327XT Infineon, BSS84PH6327XT Datasheet

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BSS84PH6327XT

Manufacturer Part Number
BSS84PH6327XT
Description
Manufacturer
Infineon
Datasheet

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JESD22-A114-HBM
Feature
·
·
·
·
·
ESD Class
SIPMOS  Small-Signal-Transistor
Type
BSS84P
BSS84P  
Maximum Ratings, at
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
Qualified according to AEC Q101
=-0.17 A , V
=-0.17A, V
Halogen-free according to IEC61249-2-21
=25°C
=70°C
=25°C
=25°C
Rev 2.7
DS
DD
=-48V, di/dt=-200A/µs, T
=-25V, R
PG-SOT-23
PG-SOT-23         H6433:10000pcs/r. YBs
Package
GS
T A
=25
= 25 °C, unless otherwise specified
Page 1
jmax
=150°C
Tape and Reel
H6327:3000pcs/r.
jmax
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
Marking
YBs
-55... +150
55/150/56
Class 0
Product Summary
V
R
I
D
Value
0.036
-0.17
-0.14
-0.68
DS
DS(on)
±20
0.36
2.6
-6
PG-SOT-23
Gate
pin1
3
2011-07-11
-0.17
BSS84P
-60
8
1
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 2
VPS05161
Drain
pin 3
V
A
2

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BSS84PH6327XT Summary of contents

Page 1

SIPMOS  Small-Signal-Transistor Feature · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package BSS84P PG-SOT-23 BSS84P   PG-SOT-23         H6433:10000pcs/r. YBs Maximum Ratings Parameter ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics, at Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µA ...

Page 3

Electrical Characteristics, at Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau ...

Page 4

Power dissipation tot A BSS 84 P 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area ...

Page 5

Typ. output characteristic parameter °C j BSS 0.36W tot -0.32 -0.28 -0.24 -0.2 -0.16 -0.12 -0.08 -0. ...

Page 6

Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 98% 8 typ -60 - ...

Page 7

Typ. avalanche energy parameter -0. - 1 105 15 Drain-source breakdown ...

Page 8

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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