2PB709AR T/R NXP Semiconductors, 2PB709AR T/R Datasheet - Page 3
2PB709AR T/R
Manufacturer Part Number
2PB709AR T/R
Description
Semiconductors and Actives, pnp, Transistors, transistor, Discretes (diodes, transistors, thyristors ...)
Manufacturer
NXP Semiconductors
Datasheet
1.2PB709AR.pdf
(8 pages)
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
c
PNP general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
2PB709AQ
2PB709AR
2PB709AS
2PB709AQ
2PB709AR
2PB709AS
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 100 mA; I
= i
= 1 mA; V
e
= 0; V
CB
CB
EB
3
= 45 V
= 45 V; T
= 5 V
CONDITIONS
CB
note 1
CE
CE
B
= 10 V; f = 1 MHz
= 10 V
= 10 V; f = 100 MHz
= 10 mA; note 1
CONDITIONS
j
= 150 C
160
210
290
60
70
80
MIN.
VALUE
500
Product specification
260
340
460
5
10
5
10
500
MAX.
2PB709A
UNIT
K/W
nA
nA
mV
pF
MHz
MHz
MHz
A
UNIT