MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet

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MT47H32M16HR-25E AIT:G

Manufacturer Part Number
MT47H32M16HR-25E AIT:G
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
Manufacturer
Micron
Datasheet
Automotive DDR2 SDRAM
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
• Industrial and automotive temperature compliant
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 4 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 32ms, 8192-cycle refresh
• On-die termination (ODT)
• RoHS-compliant
• Supports JEDEC clock jitter specification
• AEC-Q100
• PPAP submisson
• 8D response time
Table 1: Key Timing Parameters
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
DD
= 1.8V ±0.1V, V
Speed Grade
-25E
-25
-3E
-3
Products and specifications discussed herein are subject to change by Micron without notice.
DDQ
= 1.8V ±0.1V
CL = 3
400
400
400
400
t
CK
Micron Confidential and Proprietary
CL = 4
533
533
667
533
Data Rate (MT/s)
1
512Mb: x8, x16 Automotive DDR2 SDRAM
CL = 5
Options
• Configuration
• FBGA package (Pb-free) – x8
• FBGA package (Pb-free) – x16
• FBGA package (lead solder) – x8
• FBGA package (lead solder) – x16
• Timing – cycle time
• Self refresh
• Operating temperature
• Revision
800
667
667
667
– 64 Meg x 8 (16 Meg x 8 x 4 banks)
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 60-ball FBGA (8mm x 10mm)
– 84-ball FBGA (8mm x 12.5mm)
– 60-ball FBGA (8mm x 10mm)
– 84-ball FBGA (8mm x 12.5mm)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– Standard
– Low-power
– Industrial (–40°C T
– Automotive (–40°C T
Note:
–40°C T
+105ºC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Not all options listed can be combined to
1
define an offered product. Use the Part
Catalog Search on
product offerings and availability.
CL = 6
A
800
800
n/a
n/a
+85°C)
C
C
CL = 7
‹ 2010 Micron Technology, Inc. All rights reserved.
+95°C;
, T
n/a
n/a
n/a
n/a
www.micron.com
A
t
Features
Marking
RC (ns)
55
55
54
55
32M16
64M8
None
-25E
HW
AAT
AIT
HR
CF
JN
-3
:G
for
L

Related parts for MT47H32M16HR-25E AIT:G

MT47H32M16HR-25E AIT:G Summary of contents

Page 1

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Products and specifications discussed herein are subject to change by Micron without notice. Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Options • Configuration – 64 Meg x 8 (16 Meg banks) – 32 Meg Meg banks) • ...

Page 2

... Note: FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN ...

Page 3

... RDQS Enable/Disable ................................................................................................................................. 78 Output Enable/Disable ............................................................................................................................... 78 On-Die Termination (ODT) ......................................................................................................................... 79 PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 4

... MRS Command to ODT Update Delay ........................................................................................................ 125 PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 5

... Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM t IS and t DH Derating Values with Differential Strobe ............................................. and b REF REF REF 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features t IH) .................................................... and IH) ........................................... ................................................... DDR2-667 ...................................... DDR2-533 ...................................... DDR2-400 ...................................... 61 ‹ ...

Page 6

... Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM t IS ............................................................................................................... .............................................................................................................. ............................................................................................................. ............................................................................................................. 63 t RCD (MIN) .............................................................................. 86 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 7

... Automotive DDR2 SDRAM t t DQSQ, QH, and Data Valid Window ................................................... DQSQ, QH, and Data Valid Window ...................................................... and DQSCK .......................................................................................... 99 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 8

... WRITE PRE, PRE_A Precharging 8 State Diagram CKE_L Self refreshing REFRESH Refreshing Precharge power- down CKE_L READ Reading READ A Reading with auto precharge Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 9

... Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM values must be derated when Micron Technology, Inc. reserves the right to change products or specifications without notice. Functional Description exceeds +85°C; this also C is < 0°C or > C ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 10

... Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM DD via 1k * resistor DD via 1k * resistor DD 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. Functional Description exceeds +85°C; C values must be derated when via 1k * resistors, or float SS DD ‹ ...

Page 11

... Column CK out decoder CK, CK Data 2 COL0, COL1 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. Functional Block Diagrams ODT control VddQ CK, CK# sw1 sw2 sw3 DLL sw1 sw2 sw3 8 MUX DRVRS ...

Page 12

... Internal Column CK out CK, CK# decoder latch COL0, COL1 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. Functional Block Diagrams VddQ CK, CK# ODT control COL0, COL1 sw1 sw2 sw3 16 DLL 16 16 sw1 sw2 sw3 MUX ...

Page 13

... DDQ V DQ3 SSQ V V REF SS CKE WE# BA0 BA1 A10 A12 RFU 13 Micron Technology, Inc. reserves the right to change products or specifications without notice DQS#/NU V SSQ DDQ DQS V NF, DQ7 SSQ V DQ0 V DDQ DDQ DQ2 V NF, DQ5 SSQ ...

Page 14

... DQ1 V DDQ DQ3 V SSQ REF CKE WE# BA0 BA1 A10 A12 RFU 14 Micron Technology, Inc. reserves the right to change products or specifications without notice UDQS#/NU V SSQ DDQ UDQS V DQ15 SSQ V DQ8 V DDQ DDQ DQ10 V DQ13 SSQ V LDQS#/NU ...

Page 15

... Automotive DDR2 SDRAM Ball Assignments and Descriptions has become stable during the power-on and initialization sequence, it REF must be maintained. REF 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. is applied during first pow- DD ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 16

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Ball Assignments and Descriptions /2). DDQ SS 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. and V . SSQ ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 17

... CTR Ball 12.5 ±0 0.8 TYP 6.4 CTR 8 ±0.1 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. Packaging Ball A1 ID 1.2 MAX 0.25 MIN ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 18

... Automotive DDR2 SDRAM 0.8 ±0.05 0.155 1.8 CTR Ball ±0 0.8 TYP 6.4 CTR 8 ±0.1 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. Packaging Ball A1 ID 1.2 MAX 0.25 MIN ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 19

... C – DIO = 1.8V ±0.1V 25° /2, V (peak-to-peak) = 0.1V. DM input is grouped with I/O C OUT(DC) DDQ OUT C are not pass/fail parameters; they are targets. 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. Packaging Max Units Notes ...

Page 20

... DD DDQ DDL 0 however, V may be REF DDQ REF specification is not exceeded. In applications where the device’s ambient tem- 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. Min Max Units –1.0 2.3 V –0.5 2.3 V –0.5 2.3 V – ...

Page 21

... measured in the center of the package, as shown STG is measured in the center of the package, as shown C Length (L) 0.5 (L) 0.5 (W) Width (W) Lmm x Wmm FBGA 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. Min Max Units –55 150 ° °C –40 95 °C – ...

Page 22

... Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Electrical Specifications – Absolute Ratings JA (°C/W) JA (°C/W) Airflow = 0m/s Airflow = 1m/s 94.2 76.5 76.4 66.9 88.8 71.3 71.4 62.1 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. JA (°C/W) Airflow = 2m/s JB (°C/W) JC (°C/W) 70.1 57.3 63.1 56.5 65.6 52.5 58.7 52.0 ‹ 2010 Micron Technology, Inc. All rights reserved. 6.1 6.0 ...

Page 23

... Defined by pattern in Table 9 (page 24) Defined by pattern in Table 9 (page 24) 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. Parameters DD -3 -37E - ...

Page 24

... Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Electrical Specifications – I DD7 without violating DD 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. Parameters DD . Where general I parameters RRD (I ) using ...

Page 25

... MR12 = x16 35 x8 125 115 x16 160 135 x8 120 110 x16 150 125 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. Parameters -3 Units ...

Page 26

... DD3N 85° 2%; I must be derated by 20 DD2P 30%; and I must be derated by 80% (I DD6 T < 85°C and the 2X refresh option is still enabled Micron Technology, Inc. reserves the right to change products or specifications without notice. Parameters DD -25E/ -3E/ Configuration - x16 100 ...

Page 27

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Clock 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 28

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Jitter Clock Strobe-Out 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. Data ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 29

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Strobe-In Data 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 30

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Data-Out 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. Data-In ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 31

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Address and Command 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 32

... Address and PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Command 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. Refresh ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 33

... Refresh Self PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications Power-Down 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 34

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications ODT 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 35

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 36

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 37

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 38

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM AC Timing Operating Specifications 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 39

... REF DDQ . This measurement taken at the nearest V REF(DC) is not applied directly to the device REF 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. AC and DC Operating Conditions Nom Max Units 1.8 1.9 1.8 1.9 1.8 1.9 0.50 × ...

Page 40

... Automotive DDR2 SDRAM Symbol R TT1(EFF) R TT2(EFF) R TT3(EFF) /2 and R are determined by separately applying V TT1(EFF) TT2(EFF Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT DC Electrical Characteristics Min Nom Max Units 120 150 180 – ...

Page 41

... Input Electrical Characteristics and Operating Conditions Symbol V V IH(DC) REF(DC) V IL(DC) + 300mV allowed provided 1.9V is not exceeded. DDQ Symbol V IH(AC) V IH(AC) V IL(AC) V IL(AC) 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. Min Max 1 + 125 V DDQ –300 V - 125 REF(DC) Min Max 250 V REF(DC) DDQ 1 ...

Page 42

... V IX(AC) specifies the input differential common mode voltage (V MP(DC 300mV allowed provided 1.9V is not exceeded. DDQ X X /2. DDQ ID(DC)min 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. Max Units V mV DDQ V mV DDQ V mV DDQ - 175 0.50 × ...

Page 43

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Input Electrical Characteristics and Operating Conditions 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. = 1.8V). DDQ ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 44

... REF and I are based on the conditions given in Notes 1 and 2. They OH(DC) OL(DC) minus a noise margin are delivered to an SSTL_18 receiver. The actual current val- IL,max 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. Max Units - 125 0.50 × 125 DDQ – ...

Page 45

... V = 280mV; V DDQ OUT OUT + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew DDQ 25 Reference point 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. Max Units – 4 – 5 V/ns = 1.8V ±0.1V 1.8V ±0.1V. DDQ DD = 1.7V; DDQ OUT /I must be less than 23 ...

Page 46

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 0.0 0.5 1.0 V (V) OUT Min 0.00 4.30 8.60 12.90 16.90 20.40 23.28 25.44 26.79 27.67 28.38 28.96 29.46 29.90 30.29 30.65 30.98 31.31 31.64 31.96 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. Output Driver Characteristics 1.5 Nom Max 0.00 0.00 5.63 7.95 11.30 15.90 16.52 23.85 22.19 31.80 27.59 39.75 32.39 47.70 36.45 55.55 40.38 62.95 44.01 69.55 47.01 75.35 49.63 80.35 51.71 84.55 53.32 87.95 54.9 90.70 56.03 93.00 57.07 95.05 58.16 97.05 59.27 99.05 60.35 101.05 ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 47

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Output Driver Characteristics 1.5 Nom Max 0.00 0.00 –5.63 –7.95 –11.30 –15.90 –16.52 –23.85 –22.19 –31.80 –27.59 –39.75 – ...

Page 48

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 0.0 0.5 1.0 V (V) OUT Min 0.00 1.72 3.44 5.16 6.76 8.16 9.31 10.18 10.72 11.07 11.35 11.58 11.78 11.96 12.12 12.26 12.39 12.52 12.66 12.78 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. Output Driver Characteristics 1.5 Nom Max 0.00 0.00 2.98 4.77 5.99 9.54 8.75 14.31 11.76 19.08 14.62 23.85 17.17 28.62 19.32 33.33 21.40 37.77 23.32 41.73 24.92 45.21 26.30 48.21 27.41 50.73 28.26 52.77 29.10 54.42 29.70 55.80 30.25 57.03 30.82 58.23 31.41 59.43 31.98 60.63 ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 49

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Output Driver Characteristics 1.5 Nom Max 0.00 0.00 –2.98 –4.77 –5.99 –9.54 –8.75 –14.31 –11.76 –19.08 –14.62 –23.85 – ...

Page 50

... Automotive DDR2 SDRAM Power and Ground Clamp Characteristics Minimum Power Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Voltage Across Clamp (V) 50 Minimum Ground Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 51

... SS -187E 0.50V 0.50V (see Figure 19) 0.19 Vns (see Figure 20) 0.19 Vns SSQ Maximum amplitude Time (ns) Maximum amplitude Time (ns) 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. Specification -25/-25E -3/-3E -37E 0.50V 0.50V 0.50V 0.50V 0.50V 0.50V 0.66 Vns 0.80 Vns 1.00 Vns 0.66 Vns ...

Page 52

... × V IL(DC) on the falling edge. For example, the CK/CK# would be –250mV to 500mV for CK IH(DC) 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. Min Max Units See Note 2 See Note 5 V × 0.49 V × ...

Page 53

... REF(DC the time of the rising clock transition), a valid in- IH[AC] IL[AC] 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating t IH (hold time) required is calculated and IH derating ...

Page 54

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating and IH) 1.5 V/ns 1.0 V/ 217 124 247 ...

Page 55

... Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. Units ...

Page 56

... Nominal region line Tangent line Nominal line TF TR Tangent line (V Setup slew rate = rising signal 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating Nominal slew rate REF region IH(AC)min REF(DC) ...

Page 57

... Nominal slew rate REF region Nominal line Tangent line REF region TF Tangent line ( IH[DC]min REF[DC Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 58

... Converting the derated base values from DQ referenced and DH ) for DDR2-533. Table 35 provides the and DH ) for DDR2-400 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating 1.4 V/ns 1.2 V/ns 1.0 V/ – – ...

Page 59

... REF(DC) /V IH(AC) IL(AC) and DQ referenced at REF is listed in Table 33 (page 60). Ta- REF t DS and a Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. 0.8 V/ 172 135 139 114 72 72 ...

Page 60

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating and and DH -specified values REF 1 ...

Page 61

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating ) at DDR2-533 REF ) REF 1.0 V/ns 0.8 V/ns 0.6 V/ ...

Page 62

... Tangent line Nominal line TR TF Tangent line ( Tangent line (V REF[DC] IL[AC]max Setup slew rate = = rising signal TF 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating REF region IH(AC)min REF(DC and V . ...

Page 63

... IH(DC)min REF(DC and V . IL(DC)max IH(DC)min Nominal line Tangent line REF region TF Tangent line ( IH[DC]min REF[DC and V . IL(DC)max IH(DC)min Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 64

... DQS# DQS Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating b V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)min V IL(AC)min V SSQ a V DDQ V IH(AC)min ...

Page 65

... DDQ Crossing point Vswing SSQ 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating V REF V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)max V IL(AC)max V SSQ ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 66

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands BA2– WE# BA0 An–A11 A10 A9–A0 Notes code ...

Page 67

... The bank has been precharged, plete. A row in the bank has been activated, and accesses and no register accesses are in progress. terminated. terminated. 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands t XSNR has been t RP has been met, and any READ burst is com- t RCD has been met. No data bursts/ ‹ ...

Page 68

... Starts with registration of a PRECHARGE ALL command and ends when met. After RP is met, all banks will be in the idle state. 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands has been met. After RP is met, the ...

Page 69

... A READ burst has been initiated with auto precharge disabled and has not yet terminated. A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands Command/Action t XSNR has been ...

Page 70

... In either case, all other related limitations apply (contention between read da- ta and write data must be avoided). To Command (Bank m) PRECHARGE or ACTIVATE PRECHARGE or ACTIVATE 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands ends, with WR measured ...

Page 71

... Automotive DDR2 SDRAM t RCD (MIN) by delaying the actual registration of the READ/WRITE t RCD (MIN) by delaying the actual registration of the READ/WRITE 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands t MRD is met. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 72

... Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM t RP) after the PRECHARGE command is issued, except in the case of 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. Mode Register (MR) ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 73

... Mode Register (Mx) Burst Length 0 Reserved 1 Reserved Reserved 1 Reserved 0 Reserved 1 Reserved Burst Type Sequential Interleaved CAS Latency (CL) Reserved Reserved Reserved Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 74

... Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 75

... CK (ns). Reserved states should not be used as an un- t XARDS parameter is used for slow-exit active PD exit timing. The DLL can Specifications and Conditions table Micron Technology, Inc. reserves the right to change products or specifications without notice. Mode Register (MR (in normal and I low- ...

Page 76

... NOP NOP ( READ NOP NOP ( AC, DQSCK, and 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. Mode Register (MR) t RCD (MIN) by delaying the inter NOP NOP NOP ...

Page 77

... Address bus Extended mode 1 0 register (Ex) DLL E0 DLL Enable 0 Enable (normal) 1 Disable (test/debug) Output Drive Strength Full Reduced Reserved Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 78

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM DQSCK parameters. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. Extended Mode Register (EMR) ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 79

... Off-Chip Driver (OCD) Impedance Calibration The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by Micron and thereby must be set to the default state. Enabling OCD beyond the default settings will alter the I/O drive characteristics and the timing and output I/O specifica- tions will no longer be valid (see Initialization (page 83) for proper setting of OCD de- faults) ...

Page 80

... Transitioning Data t DQSQ NOP NOP NOP Transitioning Data Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. T8 NOP Don’t Care T7 NOP Don’t Care ...

Page 81

... Extended mode register (EMR refresh rate (>85°C) Extended mode register (EMR2) Extended mode register (EMR3) 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. Extended Mode Register 2 (EMR2) MRD before initiating any subsequent opera Address bus Extended mode ...

Page 82

... Mode Register Set Mode register (MR) Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. Extended Mode Register 3 (EMR3) MRD before initiating any subsequent opera- Address bus Extended mode 0 ...

Page 83

... PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. Initialization ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 84

... Issue a LOAD MODE command to the EMR to enable DLL. To issue a DLL ENABLE com- mand, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be “0.” Extended Mode Register (EMR) (page 77) for all EMR requirements. ...

Page 85

... A10 = PRECHARGE ALL, CODE = desired values for mode registers (bank addresses are required to be decoded). PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. Initialization ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 86

... NOP ACT NOP NOP Row Bank y t RRD t RCD t RRD. 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. ACTIVATE t RCD (MIN) should be divided Figure 41 also shows the case for NOP NOP NOP RD/WR Row ...

Page 87

... ACT READ Row Col Row Col Bank b Bank b Bank c Bank c t FAW (MIN 3.75ns Micron Technology, Inc. reserves the right to change products or specifications without notice NOP ACT READ NOP Row Col Bank d Bank d t RRD (MIN) = 7.5ns, ‹ ...

Page 88

... DQSQ (valid data-out skew), t DQSCK (DQS transition skew to CK) and t t DQSS (NOM) case is shown ( DQSS [MIN] and 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. READ t RPRE). The t QH (data-out t DQSS [MAX] are de- ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 89

... ( READ NOP NOP Bank a, Col ( AC, DQSCK, and DQSQ. 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. T3 T3n T4 T4n T5 NOP NOP NOP T4n T5 T5n NOP NOP NOP ...

Page 90

... T2n T3 READ NOP READ NOP Bank, Bank, Col n Col b t CCD AC, DQSCK, and DQSQ. 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. T5n T6n T3n T4 T4n T5 T6 NOP NOP NOP T5n T6n T3n T4 ...

Page 91

... READ NOP NOP READ NOP Bank, Bank, Col n Col AC, DQSCK, and DQSQ. 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. T4n T5 T6 T6n T7 T7n T8 NOP NOP NOP NOP DO b T4n T5 T5n T6 T7 T7n T8 ...

Page 92

... Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. READ T9 Valid DO Don’t Care T11 NOP Don’t Care ...

Page 93

... NOP AL + BL/2 - 2CK + MAX ( t RTP 2CK) Bank •t RTP (MIN) •t RAS (MIN) •t RC (MIN) 2 clocks AC, DQSCK, and 93 Micron Technology, Inc. reserves the right to change products or specifications without notice NOP NOP ACT NOP Bank a Valid • ...

Page 94

... RTP + RP always rounded up to the next integer. A general purpose equa- To Command (Bank m) PRECHARGE or ACTIVATE 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. t RAS (MIN) is not satisfied at this rising clock t t RTP (MIN) is satisfied. When the internal t t ...

Page 95

... NOP 1 NOP 1 READ 2 NOP 1 t RTP 4 Col n 5 Bank x t RCD RAS Micron Technology, Inc. reserves the right to change products or specifications without notice T7n T8 T8n PRE 3 NOP 1 NOP 1 All banks One bank Bank DQSCK (MIN) ...

Page 96

... NOP 1 READ 2,3 NOP 1 NOP 1 Col n 4 Bank RCD t RTP t RAS t RC 4-bit prefetch 96 Micron Technology, Inc. reserves the right to change products or specifications without notice T7n T8 T8n NOP 1 NOP 1 NOP DQSCK (MIN) t RPST t RPRE (MIN) ...

Page 97

... clock transitions collectively when a bank is active HP QHS. 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. T3 T3n DQSQ 2 t DQSQ QHS t QHS T2n T3 ...

Page 98

... QHS Data valid Data valid window clock transitions collectively when a bank is active. 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. T3 T3n DQSQ 2 t DQSQ QHS t QHS t QHS ...

Page 99

... T3n t LZ (MIN (MIN) t DQSQ after DQS transitions, regardless (MIN) are the first valid signal transitions (MAX) are the latest valid signal transitions. 99 Micron Technology, Inc. reserves the right to change products or specifications without notice DQSQ. T4 T4n T5 T5n T6 ...

Page 100

... WTR is either starts at the end of the data burst, regardless To Command (Bank m) PRECHARGE or ACTIVATE 100 Micron Technology, Inc. reserves the right to change products or specifications without notice. t DQSS for Upon com WTR/ CK, whichever is greater. Data for any t WR must be ...

Page 101

... DQSS DQ DM 101 T2 T2n T3 T3n T4 NOP NOP DQSS 5 t DQSS Transitioning Data Don’t Care t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. WRITE ...

Page 102

... T5n T6 WRITE NOP NOP NOP Bank, Col Transitioning Data Don’t Care t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. WRITE Don’t Care T6n ...

Page 103

... Transitioning Data t CK from previous WRITE. t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. WRITE T9 Valid Don’t Care where ...

Page 104

... T2n T3 T3n T4 T5 NOP NOP NOP NOP t WTR 104 Micron Technology, Inc. reserves the right to change products or specifications without notice READ NOP NOP NOP Bank a, Col Transitioning Data Don’t Care t DQSS. ...

Page 105

... T2n T3 T3n T4 NOP NOP NOP 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. WRITE NOP NOP PRE Bank all) Transitioning Data Don’t Care t DQSS not required and ...

Page 106

... ± t DQSS (NOM) t WPRE DQSS (MIN) and is referenced from T6. t DQSS (MAX) and is referenced from T7. 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. T5n T6 T6n T7 T8 NOP 1 NOP 1 NOP RAS ...

Page 107

... RAS WL ± t DQSS (NOM) t WPRE DQSS (MIN) and is referenced from T6. t DQSS (MAX) and is referenced from T7. 107 Micron Technology, Inc. reserves the right to change products or specifications without notice. T5n T6 T6n T7 T8 NOP 1 NOP 1 NOP DQSL t DQSH t WPST Transitioning Data Don’ ...

Page 108

... RCD t RAS WL ± t DQSS (NOM) t WPRE DQSS (MIN) and is referenced from T7. t DQSS (MAX) and is referenced from T8. 108 Micron Technology, Inc. reserves the right to change products or specifications without notice. T9 T10 T6n T7 T7n T8 NOP 1 NOP 1 NOP 1 NOP ...

Page 109

... DQSS (MIN). t DQSS (MAX timing applies. When the PRECHARGE (ALL) com- t RPA timing applies, regardless of the number of banks opened. 109 Micron Technology, Inc. reserves the right to change products or specifications without notice. PRECHARGE T3n T4 t DSH 1 t DSS 2 t DQSH t WPST Don’ ...

Page 110

... Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM Ta0 NOP 1 NOP 1 NOP 1 REF RFC (MIN) 110 Micron Technology, Inc. reserves the right to change products or specifications without notice. REFRESH exceeds C Ta1 Tb0 Tb1 Tb2 REF 2 NOP 1 NOP 1 ACT ...

Page 111

... Automotive DDR2 SDRAM t CKE specifications at least 1 × t XSNR. A simple algorithm for meeting both refresh and DLL require- 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. SELF REFRESH t CK after entering self re specifications at least 1 × ...

Page 112

... CK prior to exiting self refresh mode. t XSRD is met; however, if self refresh is being re-entered, CKE t XSNR is satisfied. t off ( AOFD and TT t 112 Micron Technology, Inc. reserves the right to change products or specifications without notice. SELF REFRESH Tb0 Tc0 Ta2 t ISXR 2 t CKE 3 NOP 4 NOP 4 Valid 5 Valid ...

Page 113

... CK, whichever is greater. t RFC (MAX). The minimum duration for power-down t CKE (MIN) parameter. The following must be main- 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode t WTR (WRITE-to- t WTR ‹ 2010 Micron Technology, Inc. All rights reserved. ...

Page 114

... NOP t CKE (MIN Exit power-down mode and IH window. 114 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode NOP Valid Valid CKE (MIN) 2 Valid Valid XARD 4 t XARDS 5 Don’t Care ...

Page 115

... H Shown in Table 36 (page 66) t XSNR period. READ commands may be issued only after t CKE = 3 × 115 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode Action (n) Maintain power-down Power-down exit Maintain self refresh Self refresh exit Active power-down en- ...

Page 116

... T3 T4 NOP NOP Valid NOP NOP Valid 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode T5 T6 NOP 1 Valid t CKE (MIN Power-down 2 or self refresh entry Transitioning Data NOP 1 Valid ...

Page 117

... Indicates a break in time scale later at Ta1, prior to RP being satisfied. t CK. 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode NOP 1 Valid t CKE (MIN) t WTR Power-down or self refresh entry 1 Transitioning Data ...

Page 118

... Valid ACT NOP VALID Power-down 1 entry 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode T3 t CKE (MIN) Don’t Care t CK after the t RFC (MIN) being satis CKE (MIN) Don’t Care ...

Page 119

... CK Power-down 1 entry Valid LM NOP Valid MRD 119 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode CKE (MIN) Don’t Care t CK after the t RP (MIN) being sat NOP t CKE (MIN) ...

Page 120

... CKE (MIN) 3 NOP Frequency Exit precharge change power-down mode required after entering precharge power-down prior to chang- 120 Micron Technology, Inc. reserves the right to change products or specifications without notice. New clock frequency Ta4 Ta2 Ta3 t CKE (MIN) 3 NOP LM NOP DLL RESET ...

Page 121

... SET operation. PDF: 09005aef8440dbbc 512mbddr2_ait_aat.pdf – Rev. C 7/11 EN Micron Confidential and Proprietary 512Mb: x8, x16 Automotive DDR2 SDRAM t t CKE = 3 × CK. Minimum CKE LOW time is 121 Micron Technology, Inc. reserves the right to change products or specifications without notice. Reset t t CKE = 3 × CK and DD ...

Page 122

... Indicates a break in Unknown time scale , and V must be valid at all times. DD DDL DDQ TT REF 122 Micron Technology, Inc. reserves the right to change products or specifications without notice. Tb0 Ta0 CKE (MIN) 1 NOP 2 PRE All banks  High-Z High 400ns (MIN) ...

Page 123

... AXPD (MIN) after exiting pow AOND and AON timing pa- t AXPD (MIN) is not t AXPD (MIN) is not satisfied, Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. ODT Timing t ANPD AXPD (MIN) is ...

Page 124

... Active power-down slow (asynchronous) Precharge power-down (asynchronous AOND/ AOFD (synchronous AONPD/ AOFPD (asynchronous) 124 Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT Timing Synchronous t t AXPD (8 CKs) First CKE latched HIGH Any mode except self refresh mode t ...

Page 125

... Valid Valid Valid Valid Valid Valid Valid Valid t AOND t AOFD t AON (MIN) t AON (MAX) R 125 Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT Timing setting. TT Ta3 Ta4 Ta5 NOP NOP NOP New setting Indicates a break in time scale ...

Page 126

... AOFPD (MIN) Transitioning NOP NOP NOP NOP t ANPD (MIN) t AOFD Transitioning R TT 126 Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT Timing Valid Valid Valid Valid Valid Valid Valid Valid t AOFPD (MAX) R ...

Page 127

... Automotive DDR2 SDRAM NOP NOP NOP NOP t ANPD (MIN) t AOND t AON (MIN) Transitioning R TT 127 Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT Timing NOP NOP NOP t AON (MAX) t AONPD (MAX) t AONPD (MIN) R Unknown R On Don’ ...

Page 128

... NOP NOP NOP t AXPD (MIN) t AOFPD (MAX) t AOFPD (MIN) Indicates a break in R Unknown TT time scale 128 Micron Technology, Inc. reserves the right to change products or specifications without notice. ODT Timing Ta2 Ta3 Ta4 Ta5 NOP NOP NOP NOP t AOFD t AOF (MAX) t AOF (MIN) ...

Page 129

... Ta1 NOP NOP NOP NOP t AOND t AON (MAX) t AON (MIN) t AONPD (MAX) t AONPD (MIN Transitioning Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2010 Micron Technology, Inc. All rights reserved. Ta5 NOP Don’t Care ...

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