IPB100N06S3L04XT Infineon, IPB100N06S3L04XT Datasheet

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IPB100N06S3L04XT

Manufacturer Part Number
IPB100N06S3L04XT
Description
Transistors Mosfet n-Ch 55v 100a 3pin To-263
Manufacturer
Infineon
Datasheet
Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N06S3L-04
IPI100N06S3L-04
IPP100N06S3L-04
®
-T2 Power-Transistor
2)
3)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3PN06L04
3PN06L04
3PN06L04
stg
PG-TO263-3-2
T
T
V
T
I
T
D
C
C
C
C
GS
=50 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPI100N06S3L-04, IPP100N06S3L-04
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
1090
100
100
400
100
±16
214
IPB100N06S3L-04
PG-TO220-3-1
100
3.5
55
2007-11-07
Unit
A
mJ
A
V
W
°C
V
m
A

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IPB100N06S3L04XT Summary of contents

Page 1

OptiMOS ® -T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package IPB100N06S3L-04 PG-TO263-3-2 IPI100N06S3L-04 ...

Page 2

Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...

Page 3

Parameter 2) Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode ...

Page 4

Power dissipation P =f ≥ tot C GS 250 200 150 100 100 T [° Safe operating area I =f =25 ° ...

Page 5

Typ. output characteristics ° parameter 300 200 100 Typ. transfer characteristics ...

Page 6

Typ. gate threshold voltage GS(th parameter 2.5 2 1.5 150µA 1 0.5 0 -60 - [° Typical forward diode characteristicis IF ...

Page 7

Typical avalanche energy parameter 2500 25 A 2000 1500 50 A 1000 100 A 500 100 T [° Typ. gate charge ...

Page 8

... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Page 9

... IPB100N06S3L-04 Changes Removal of ordering code Implementation of avalanche current single pulse Update of Infineon address Removal of foot note 3, avalanche diagrams Implementation of Qrr and trr typ Update of disclaimer Implementation of RoHS and AEC logo, update of feature list Update of data sheet layout Adaptation of Ias from 200A to ...

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